Philips Semiconductors Product specification
Rectifier diodes BYQ28E, BYQ28EB, BYQ28ED series
ultrafast, rugged
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop VR = 150 V/ 200 V
• Fast switching
• Soft recovery characteristic VF ≤ 0.895 V
• Reverse surge capability
• High thermal cycling performance IO(AV) = 10 A
• Low thermal resistance IRRM = 0.2 A
trr ≤ 25 ns
GENERAL DESCRIPTION
Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power
supplies.
The BYQ28E series is supplied in the SOT78 conventional leaded package.
The BYQ28EB series is supplied in the SOT404 surface mounting package.
The BYQ28ED series is supplied in the SOT428 surface mounting package.
PINNING SOT78 (TO220AB) SOT404 SOT428
PIN DESCRIPTION
1 anode 1
2 cathode 1
3 anode 2
tab cathode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
BYQ28E/ BYQ28EB/ BYQ28ED -150 -200
VRRM Peak repetitive reverse - 150 200 V
voltage
VRWM Working peak reverse - 150 200 V
voltage
VRContinuous reverse voltage - 150 200 V
IO(AV) Average rectified output square wave; δ = 0.5; Tmb ≤ 119 ˚C - 10 A
current (both diodes
conducting)
IFRM Repetitive peak forward square wave; δ = 0.5; Tmb ≤ 119 ˚C - 10 A
current per diode
IFSM Non-repetitive peak forward t = 10 ms - 50 A
current per diode t = 8.3 ms - 55 A
sinusoidal; with reapplied VRRM(max)
IRRM Peak repetitive reverse tp = 2 µs; δ = 0.001 - 0.2 A
surge current per diode
IRSM Peak non-repetitive reverse tp = 100 µs - 0.2 A
surge current per diode
TjOperating junction - 150 ˚C
temperature
Tstg Storage temperature - 40 150 ˚C
1. It is not possible to make connection to pin 2 of the SOT428 or SOT404 packages.
k
a1 a2
13
2
1
2
3
tab
13
tab
2
123
tab
October 1998 1 Rev 1.300