Silicon NPN Transistor
Page <2> 12/12/11 V1.1
www.element14.com
www.farnell.com
www.newark.com
Thermal Characteristics
Characteristic Symbol Maximum Unit
Thermal resistance junction to case Rθjc 0.875 °C/W
TC, Temperature (°C)
PD, Power Dissipation (Watts)
Figure-1 Power Derating
Characteristic Symbol Minimum Maximum Unit
OFF Characteristics
Collector - emitter sustaining voltage (1)
(IC= 200 mA, IB= 0) VCEO (SUS) 90 - V
Collector - emitter breakdown voltage (1)
(IC= 0.2 A, VBE (off) = 1.5 V, RBE = 100 Ohms) BVCER 100 - V
Collector cut off current
(VCB = 100 V, IE= 0)
(VCB = 100 V, IE= 0, TC = 150°C)
ICBO -1
5mA
Emitter cut off current
(VEB = 4 V, IC= 0) IEBO - 1 mA
ON Characteristics (1)
DC current gain
(IC= 7.5 A, VCE = 2 V) hFE 25 100 -
Collector - emitter saturation voltage
(IC= 7.5 A, IB= 0.75 A) VCE (sat) - 0.8 V
Base - emitter saturation voltage
(IC= 7.5 A, IB= 0.75 A) VCE (sat) 1.3
Base - emitter on voltage
(IC= 7.5 A, VCE = 2 V) VBE (on) - 1.3 V
Dynamic Characteristics
Current - gain bandwidth product
(IC= 1 A, VCE = 10 V, f = 1 MHz) fT2 - MHz
Electrical Characteristics (TC= 25°C Unless Otherwise Noted)
(1) Pulse Test : Pulse width = 300 µs, duty cycle ≤2%