3875081 GE SOLID STATE O1 Def) 3875081 0017239 & To 7- 35-33 Darlington Power Transistors File Number 1001 20-Ampere Complementary N-P-N and P-N-P Monolithic 2N6282, 2N6283, 2N6284, 2N6285, 2N6286, 2N6287 Darlington Power Transistors 60-80-100 Volts, 160 Watts Gain of 2400 (Typ.) at 10 A (2N6282, 2N6283, 2N6284) Gain of 3500 (Typ.) at 10 A (2N6285, 2N6286, 2N6287) Features: Operates from IC without predriver Monolithic construction The RCA-2N6282, 2N6283, and 2N6284 and the 2N6285, 2N6286, and 2N6287 are complementary n-p-n and p-n-p monolithic silicon Darlington transistors designed for general purpose amplifier and low-speed switching appli- cations. The high gain of these devices makes it possible for them to be driven directly from integrated circuits. These devices are supplied in the JEDEC TO-204AA steel hermetic package. MAXIMUM RATINGS, Absolute-Maximum Values: Vego- - Vegolsus) Veso- Ig. lom Ig - P: To <28C To > 28C * Tstg, TI . * TT Ce At distances = 1/16 in. (1.68 mm) from case for 10s max. * In accordance with JEDEC registration data. . Derate linearly For p-n-p devices, voltage and current values are negative - TERMINAL DESIGNATIONS c {FLANGE} @2CS- 27516 JEDEC TO-2044A High voltage ratings: Vegolsus) = 60 V Min. 2N6282, 2N6285 = 80 V Min. 2NG283, 2N6286 = 100 V Min. 2N6284, 2N6287 Applications: Power switching = Hammer drivers Series and shunt regulators = Audio amplifiers 2N6282 2N6283 2N6284 2Ne285 2Ne286 2N6287 60 80 100 v 60 80 400 v 5 5 5 v 20 20 20 A 40 40 40 A 05 05 05 A 160 160 160 Ww 0.915 wic __ 65 to 200 c 238 c 241 o78h 6-06fleeces rernerteaneananmamnss 3875081 G E SOLID STATE 01 DE 3a75081 Oo17z4u02 fF 7 sBa-23 Darlington Power Transistors 2N6282, 2N6283, 2N6284, 2N6285, 2N6286, 2N6287 92cs-2zg128 Fig. 1 Schematic diagram for 2N6282, 2N6283, and 2N6264. g2es-29129 Fig. 2 Schematic diagram for 2N6285, 2N6286, and 2N6287. ELECTRICAL CHARACTERISTICS, at Case Temperature (Tc) = 25C Unless Otherwise Specified TEST CONDITIONS LIMITS VOLTAGE | CURRENT] 2N6282 2N6283 2N6284 CHARACTERISTIC] Vdc Adc gnezes | 2Nezs6 | 2N6287 | UNITS VcelYpe |'c | Ip [MIN.| MAX. | MIN.) MAX. | MIN.| MAX. 30 o] - Wy - -|- - * lIcEO 40 Oo} - - - o- - 50 ol - - |- |- 1] mA 60 |-1.5 _ 05| ~ |- - * lloEx 80 |-1.5 - ~ |- 0.5} _ 400 |1.5 - - |- |- 0.5 60 |-1.5 - 5] - _~|- _ Tc = 150C 80 |-1.5 - - |- 5] - - 100 |1.5 = - |- -|- 5 * lego 5 0 - 2 _- 2 - 2 mA * WVoeol(sus) 0.12] of so} | 80 - |100} Vv lh 3 208 100 | - |100 |to0} FE 3 108 750 |18,000 |750 |18,000] 750 |18,000 207} 0.2| 3] - 3} 3 * Vog(sat) 103 |0.04] 2} - 2| - 2 v * Wee 3 108 _ 28] 28} 2.8 * Wae(sat) 207} 0.2] 4|- 4| 4 # tp fe _ _ fe he 3 10 300 300 300 * lhfel _ fe Me 3 10 4 4 4] - * Cob Vop= 10V,lE9, f=0.1 MHz 2N6282-84 - 400 | 4o0| 400 F 2N6285-87 - 600 | 600} goo} ? Sib 30 53 | - [53 ~ [53] - A t= 15, nonrep. Resc 1.09 | 1.09} 1.09 [C/W 3 Pulsed: Pulse duration = 300 ys, duty factor = 1.8%. * In accordance with JEDEC registration data. 242 _ For p-n-p devices, voltage and current values are negative. 0782 G-0?oe 3875081 GE SOLID STATE O41 a | 387508 O017241 4 T-34-23 varungton Power Transistors 2N6282, 2N6283, 2N6284, 2N6285, 2N6286, 2N6287 {CURVES WITH a0 Voeo (MAX) #60 Vogg (MAX) 60V(2N6263,2N6266 (MAX) #100V(2N6284, 2NG287* 2 20 too. toco COLLECTOR- TO-EMITTER VOLTAGE {Vog}-V 92CM- 29130 FOR p-n-p DEVICES, VOLTAGE AND CURRENT VALUES ARE NEGATIVE Fig. 3 Maximum operating areas for ail types. 25 150 CASE TEMPERATURE (Tc ) C #2LS-rtsam Fig. 4 Current derating curve for all types. TO-EMITTER av 10? OL too f 1a COLLECTOR CURRENT (Ic)-A saca-risini Fig. 6 Typical de beta characteristics for 2N6282, 2N6283, and 2N6284. c g2cs-2913t Fig. 5 Power derating curve for afl types, COLLECTOR-TO- EMITTER VOLTAGE 2 4 638 COLLECTOR CURRENT(I1A p2eS-29133 Fig. 7 Typical de beta characteristics for 2N6285, 2N6286, and 2N6287. 2 6 2 4 68 -ol =100 243 0783 G-083875081 GE SOLID STATE O1 pe ff sazsoa1 Oou7ekye & i 7-33-33 Darlington Power Transistors 2N6282, 2N6283, 2N6284, 2N6285, 2N6286, 2N6287 Tc /TglFORCED Ape] *100 CASE TEMPERATURE Le/Ig #250 4| Ser *tp2 a 1 wy = F 2 z = o e x wa COLLECTOR - TO-EMITTER SATURATION VOLTAGE ot Vee eat] V COLLECTOR CURRENT (I I-A FOR p-n-p DEVICES, VOLTAGE AND CURRENT VALUES ARE NEGATIVE 9209-29136 92cs-29135 Fig. 9 Typical switching times for 2N6282, Fig. 8 Typical saturation characteristics for all types. 2N6283, and 2N6284. TEMPERATURE 32 25C 250 it (OFF) =0 -OF ol -10 100 COLLECTOR CURRENT (I I-A 9208-29137 Fig. 10 Typical switching times far 2N6285, 2N6286, and 2N6287. Vee -30 Re OSCILLOSCOPE OEVICE UNCER TEST v2 APPOX~-pa,--O +i2 o-_ fb vi APPOX- -8V = testy < lOna DUTY CYCLE=1% FOR tg AND i,,D) IS ~ DISCONNECTED AND V2 #0 Rg @ Re VARIED TO OBTAIN DESIRED CURRENT LEVELS 0, MUST BE FAST RECOVERY TYPE FOR n-p-n TEST CIRCUIT REVERSE DIODE AND VOLTAGE POLARITIES Fig, 11 - Switching times test circult. g92c$- 29138 244 0784 G-09