BSS138DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features V(BR)DSS RDS(ON) max ID max TA = +25C 50V 3.5 @ VGS = 10V 200mA Description Mechanical Data This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Notes 3) Qualified to AEC-Q101 Standards for High Reliability Load Switch Case: SOT-363 Case Material: Molded Plastic. "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.006 grams (approximate) SOT-363 S1 S2 G2 D1 (Note 4) Part Number BSS138DW-7-F Notes: G1 TOP VIEW Internal Schematic TOP VIEW Ordering Information D2 Case SOT-363 Packaging 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information YM K38 Month Code 2005 S Jan 1 2006 T YM Date Code Key Year Code K38 2007 U Feb 2 BSS138DW Document number: DS30203 Rev. 13 - 2 2008 V Mar 3 K38 = Product Type Marking Code YM = Date Code Marking for SAT (Shanghai Assembly/ Test site) YM = Date Code Marking for CAT (Chengdu Assembly/ Test site) Y or Y = Year (ex: A = 2013) M = Month (ex: 9 = September) YM K38 YM K38 2009 W Apr 4 2010 X May 5 2011 Y 2012 Z Jun 6 1 of 6 www.diodes.com 2013 A Jul 7 2014 B Aug 8 2015 C Sep 9 2016 D Oct O 2017 E 2018 F Nov N 2019 G Dec D January 2014 (c) Diodes Incorporated BSS138DW Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Drain-Source Voltage Drain-Gate Voltage (Note 7) Gate-Source Voltage Drain Current (Note 5) Symbol VDSS VDGR VGSS ID Continuous Continuous BSS138DW 50 50 20 200 Units V V V mA BSS138DW 200 625 -55 to +150 Units mW C/W C Thermal Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Symbol PD RJA TJ, TSTG Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time Notes: 5. 6. 7. Symbol Min Typ Max Unit Test Condition BVDSS IDSS IGSS 50 75 0.5 100 V A nA VGS = 0V, ID = 250A VDS = 50V, VGS = 0V VGS = 20V, VDS = 0V VGS(th) RDS (ON) gFS 0.5 100 1.2 1.4 1.5 3.5 V mS VDS = VGS, ID = 250A VGS = 10V, ID = 0.22A VDS =25V, ID = 0.2A, f = 1.0KHz Ciss Coss Crss 50 25 8.0 pF pF pF VDS = 10V, VGS = 0V, f = 1.0MHz tD(ON) tD(OFF) 20 20 ns ns VDD = 30V, ID = 0.2A, RGEN = 50 Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. Short duration pulse test used to minimize self-heating effect. RGS 20K. BSS138DW Document number: DS30203 Rev. 13 - 2 2 of 6 www.diodes.com January 2014 (c) Diodes Incorporated BSS138DW 0.8 VGS = 3.5V T j = 25 C 0.7 0.5 ID, DRAIN-SOURCE CURRENT (A) ID, DRAIN-SOURCE CURRENT (A) 0.6 VGS = 3.25V 0.4 VGS = 3.0V 0.3 VGS = 2.75V 0.2 VGS = 2.5V 0.1 0 150C 0.4 0.3 0.2 0.1 0 0 0.5 1 1.5 2 2.5 3 3.5 4 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Transfer Characteristics 4.5 2 VGS(th), GATE THRESHOLD VOLTAGE (V) 2.25 2.05 1.85 VGS = 10V ID = 0.5A 1.65 1.45 1.25 VGS = 4.5V ID = 0.075A 1.05 0.85 45 145 95 -5 Tj, JUNCTION TEMPERATURE (C) Fig. 3 Drain-Source On Resistance vs. Junction Temperature VGS = 2.5V 150C 7 6 5 25C 4 3 -55C 2 1 0 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 ID, DRAIN-CURRENT (A) Fig. 5 Drain-Source On-Resistance vs. Drain-Current BSS138DW Document number: DS30203 Rev. 13 - 2 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 25 50 75 100 125 150 -25 Tj, JUNCTION TEMPERATURE (C) Fig. 4 Gate Threshold Voltage vs. Junction Temperature RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 8 1.8 0 -55 0.65 -55 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 25C 0.5 2 2.45 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE () -55 C 0.6 7 3 4 5 6 8 9 10 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Drain-Source Current vs. Drain-Source Voltage 1 0 VDS = 1V 3 of 6 www.diodes.com 9 VGS = 2.75V 8 7 150C 6 5 4 25C 3 2 -55C 1 0 0.2 0.25 0.1 0.15 ID, DRAIN-CURRENT (A) Fig. 6 Drain-Source On-Resistance vs. Drain-Current 0 0.05 January 2014 (c) Diodes Incorporated 3.5 6 VGS = 4.5V 5 150 C 4 3 25C 2 1 -55C 0 0 0.5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () BSS138DW VGS = 10V 150C 3 2.5 2 25C 1.5 1 -55C 0.5 0 0 0.5 ID, DRAIN-CURRENT (A) Fig. 8 Drain-Source On-Resistance vs. Drain-Current ID, DRAIN-CURRENT (A) Fig. 7 Drain-Source On-Resistance vs. Drain-Current 100 1 C, CAPACITANCE (pF) ID, DIODE CURRENT (A) VGS = 0V f = 1MHz 150C 0.1 -55C 0.01 25C Ciss 10 Coss C rss 0.001 0.2 0.6 1 1.2 0.4 0.8 VSD, DIODE FORWARD VOLTAGE (V) Fig. 9 Body Diode Current vs. Body Diode Voltage 0 BSS138DW Document number: DS30203 Rev. 13 - 2 4 of 6 www.diodes.com 1 0 5 15 20 25 10 30 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Capacitance vs. Drain-Source Voltage January 2014 (c) Diodes Incorporated BSS138DW Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A B C H K M J D F L SOT363 Dim Min Max Typ A 0.10 0.30 0.25 B 1.15 1.35 1.30 C 2.00 2.20 2.10 D 0.65 Typ F 0.40 0.45 0.425 H 1.80 2.20 2.15 J 0 0.10 0.05 K 0.90 1.00 1.00 L 0.25 0.40 0.30 M 0.10 0.22 0.11 0 8 All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. C2 Z C2 Dimensions Value (in mm) Z 2.5 G 1.3 X 0.42 Y 0.6 C1 1.9 C2 0.65 C1 G Y X BSS138DW Document number: DS30203 Rev. 13 - 2 5 of 6 www.diodes.com January 2014 (c) Diodes Incorporated BSS138DW IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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