MBR4035PT thru MBR4060PT Vishay Semiconductors formerly General Semiconductor Dual Schottky Barrier Rectifier Reverse Voltage 35 to 60V Forward Current 40A Features TO-247AD (TO-3P) 0.645 (16.4) 0.625 (15.9) 0.245 (6.2) 0.225 (5.7) 0.323 (8.2) 0.313 (7.9) 0.203 (5.16) 0.193 (4.90) 0.078 REF (1.98) 10 30 0.170 (4.3) 0.840 (21.3) 10 TYP. BOTH SIDES 0.142 (3.6) 0.138 (3.5) 0.820 (20.8) 1 2 3 0.086 (2.18) 0.076 (1.93) 1 REF. BOTH SIDES 0.795 (20.2) 0.775 (19.6) 0.225 (5.7) 0.205 (5.2) Mechanical Data 0.118 (3.0) 0.127 (3.22) 0.160 (4.1) 0.140 (3.5) 0.108 (2.7) 0.117 (2.97) PIN 1 PIN 2 PIN 3 CASE Dimensions in inches and (millimeters) 0.030 (0.76) 0.048 (1.22) 0.044 (1.12) * Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 * Dual rectifier construction, positive center-tap * Metal silicon junction, majority carrier conduction * Low power loss, high efficiency * High current capability, low forward voltage drop * High surge capability * For use in low voltage, high frequency inverters, free-wheeling, and polarity protection applications * Guardring for overvoltage protection * High temperature soldering guaranteed: 250C/10 seconds, 0.17" (4.3mm) from case 0.020 (0.51) Case: JEDEC TO-247AD molded plastic body Terminals: Lead solderable per MIL-STD-750, Method 2026 Polarity: As marked Mounting Position: Any Mounting Torque: 10 in-lbs max. Weight: 0.2 oz., 5.6 g Maximum Ratings & Thermal Characteristics Parameter Ratings at 25C ambient temperature unless otherwise specified. Symbol MBR4035PT MBR4045PT MBR4050PT MBR4060PT Unit Maximum repetitive peak reverse voltage VRRM 35 45 50 60 V Maximum working peak reverse voltage VRWM 35 45 50 60 V Maximum DC blocking voltage VDC 35 45 50 60 V Maximum average forward rectified current at TC = 125C IF(AV) 40 A Peak repetitive forward current per leg at TC=120C (rated VR, square wave, 20 KHZ) IFRM 40 A Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) IFSM 400 A Peak repetitive reverse surge current IRRM (NOTE 1) 2.0 1.0 A Maximum thermal resistance from junction to case per leg RJC 1.2 C/W Voltage rate of change at (rated VR) dv/dt 10,000 V/s TJ - 65 to +150 C TSTG - 65 to +175 C Operating junction temperature range Storage temperature range Electrical Characteristics Ratings at 25C ambient temperature unless otherwise specified. Parameter Maximum instantaneous forward voltage per leg at: (NOTE 2) Symbol MBR4035PT MBR4045PT MBR4050PT MBR4060PT IF IF IF IF = = = = 20A, TC 20A, TC 40A, TC 40A, TC = = = = Maximum instantaneous reverse current at rated DC blocking voltage per leg (NOTE 2) 25C 125C 25C 125C VF TC = 25C TC = 125C IR 0.70 0.60 0.80 0.75 0.72 0.62 - - 1.0 100 Unit V mA Notes: (1) 2.0s pulse width, f = 1.0 KHZ (2) Pulse test: 300s pulse width, 1% duty cycle Document Number 88679 07-Feb-02 www.vishay.com 1 MBR4035PT thru MBR4060PT Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (T A = 25C unless otherwise noted) Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Leg 400 50 Peak Forward Surge Current (A) Average Forward Current (A) Resistive or Inductive Load 40 30 20 10 0 50 100 200 150 1 100 10 Case Temperature (C) Number of Cycles at 60 HZ Fig. 3 - Typical Instantaneous Forward Characteristics Per Leg Fig. 4 - Typical Reverse Characteristics Per Leg 50 50 Pulse width = 300s 1% Duty Cycle 10 TJ = 150C TJ = 25C 1 0.1 IR -- Instantaneous Reverse Current (mA) IF -- Instantaneous Forward Current (A) 300 100 0 MBR4035PT - MBR4045PT MBR4050PT & MBR4060PT 0.2 0.4 0.6 1.0 0.8 10 TJ = 125C 1 TJ = 75C 0.1 TJ = 25C 0.01 MBR4035PT - MBR4045PT MBR4050PT & MBR4060PT 0.001 0.01 0 1.2 0 40 20 60 80 100 Instantaneous Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig. 5 - Typical Junction Capacitance Per Leg Fig. 6 - Typical Transient Thermal Impedance Per Leg 5,000 100 TJ = 25C f = 1.0 MHZ Vsig = 50mVp-p 1,000 MBR4035PT - MBR4045PT MBR4050PT & MBR4060PT 100 0.1 1 10 Reverse Voltage (V) www.vishay.com 2 100 Transient Thermal Impedance (C/W) pF -- Junction Capacitance TJ = TJ max. 8.3ms Single Half Sine-Wave (JEDEC Method) 10 1 0.1 0.01 0.1 1 10 100 t -- Pulse Duration (sec.) Document Number 88679 07-Feb-02 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1