BC846 BC847 BC848 SILICON PLANAR EPITAXIAL TRANSISTORS General purpose n-p-n transistors in a plastic SOT-23 package. QUICK REFERENCE DATA BC846 | BCB47_| BC848 Collector-emitter voltage (Vpe = 0) VcesS max. 80 50 30 Vv Collector-emitter voltage (open base) VCEQ max. 65 45 30 Vv Collector current (peak value} lem max. 200 200 200 mA Total power dissipation up tO Tamb = 25 OC Prot max. 250 ; 250 250 mw Junction temperature Tj max. 150 150 150 9C DC current gain Ic= 2 MA: Voe = 5V Me == aso | a0 Transition frequency at f = 100 MHz Ic = 10mA; VceE=5V fr > 100 > 100 > 100 MHz Noise figure at Rg = 2 kQQ Ic = 200 nA; VcpE =5V f= 1 kHz; B = 200 Hz F typ. 2 2 ; 2 dB MECHANICAL DATA Dimensions in mm Marking code: Fig. 1 SOT-23. 38 BC846 = 1Dp : >{a] BCB46A = tAp 0.150 + fi.3] _ BCB46B = 1Bp _ _ BCB47._ = 1Hp 035 A =fo2@[als] aceaza = 1p BC847B =1Fp lo 41 4ty BC847C =1Gp CH BC848. = 1Mp f BCB48A = 1p 14 2.5 BC848B = 1Kp | 1.2 max BC848C = iLp ro Pinning: 3] ef 1 = base | 2 = emitter 0 = 0.48_ 5.7 0.1) |A[B| yrosaes 1 3 = collector Cc TOP VIEW b Reverse pinning types are available on request. MB8B012 e September 1994 165BC846 BC847 BC848 RATINGS Limiting values in accordance with the Absulute Maximum System (IEC 134) Collector-base voltage (open emitter) Collector-emitter voltage (Vpe = 0) Collector-emitter voltage (open base} Emitter-base voltage (open collector) Collector current (d.c.} Collector current (peak value) Emitter current (peak value) Base current (peak value) Total power dissipation* up to Tamb = 25 PC Storage temperature Junction temperature THERMAL RESISTANCE From junction to ambient* VcBo VCES VCEO VEBO max. max, max. max. max. max. max. max. max. BC846 80 50 80 50 650 | S45 6 | 6 100 200 200 200 250 65 to + 150 150 Rth j-a = * Mounted on an FR4 printed-circuit board 8 mm x 10 mm x 0.7 mm. BC847 30 30 30 5 BC848 mA mA mA mA mw C C 500 K/W 166 September 1994BC846 Silicon planar epitaxial transistors BC847 BC848 CHARACTERISTICS Tj= 25 OC unless otherwise specified Collector cut-off current Ie = 0; Vcp=30V IcBo < 15 nA lg = 0; Vcg = 30 V; Tj = 150C IcBO < 5 pA Base-emitter voltage typ. 660 mV Io= 2mAVce=5V VBE 580 to 700 mV Ic = 10mMA; Vcp=5V VBE < 770 mV Saturation voltage* * typ. 90 mV Ic = 10mA; 1p =0,5 mA VCEsat < 250 mV VBEsat typ. 700 mV typ. 200 mV Ic = 100 mA; Ip =5mA VCEsat 600 mV VBEsat typ. 900 mV Collector capacitance at f = 1 MHz Ip =le=0; Veg =10V Co typ. 2,5 pF Transition frequency at f = 100 MHz le =10mMA;VcpE=5V ft > 100 MHz * Vee decreases by about 2 mV/K with increasing temperature. ** Veesat decreases by about 1,7 mV/K with increasing temperature. September 1994 167BC846 BC847 BC848 Small signal current gain at f = 1 kHz Ic=2mA;Vce=5V Noise figure at Rg = 2kQ I = 200 vA; Voce = SV; f= 1kHz;B = 200 Hz DC current gain Ic = 10pA; Vecp Hr5V Ic=2mA;Vce=5V hfe HEE hFE typ. typ. 110 800 2 dB 10 dB 110 110 450 800 BC846A BC847 | BC847A 90 110 180 220 BC846B BC847B | BC847C BC846 | BC848 | BC848A BC848B | BC848C 150 200 290 450 270 420 520 800 168 September 1994