MICROWAVE POWER GaAs FET TIM1213-10L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 29.0dBm n HIGH POWER P1dB=40.5dBm at 12.7GHz to 13.2GHz n HIGH GAIN G1dB=6.0 dB at 12.7 GHz to 13.2GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current SYMBOL P1dB Channel Temperature Rise G1dB IDS1 G CONDITIONS VDS= 9V f= 12.7 to 13.2GHz add UNIT dBm MIN. 40.0 TYP. MAX. 40.5 dB 5.0 6.0 A dB % dBc -42 4.0 23 -45 5.0 0.8 IM3 Two-Tone Test Po=29.0 dBm IDS2 (Single Carrier Level) A 4.0 5.0 Tch (VDS X IDS + Pin - P1dB) C 90 UNIT MIN. TYP. MAX. mS 2800 V -2.0 -3.5 -5.0 A 10.0 V -5 C/W 2.0 2.5 X Rth(c-c) Recommended gate resistance(Rg) : Rg= 100 (MAX.) ELECTRICAL CHARACTERISTICS ( Ta= 25C ) CHARACTERISTICS Transconductance Pinch-off Voltage SYMBOL gm VGSoff Saturated Drain Current IDSS Gate-Source Breakdown Voltage Thermal Resistance VGSO Rth(c-c) CONDITIONS VDS= 3V IDS= 4.8A VDS= 3V IDS= 145mA VDS= 3V VGS= 0V IGS= -145A Channel to Case u The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. July. 2005 TIM1213-10L ABSOLUTE MAXIMUM RATINGS ( Ta= 25C ) CHARACTERISTICS SYMBOL UNIT RATING Drain-Source Voltage VDS V 15 Gate-Source Voltage VGS V -5 Drain Current IDS A 11.5 Total Power Dissipation (Tc= 25 C) PT W 60 Channel Temperature Tch C 175 Storage Temperature Tstg C -65 to +175 2.0 MIN. PACKAGE OUTLINE (2-11C1B) 4-R3.0 Unit in mm Gate Drain 2.0 MIN. 3.20.3 12.90.2 Source 0.60.15 17.00.3 5.0 MAX. 2.60.3 0.2 MAX. 11.0 MAX. 1.70.3 0.1 -0.0 +0.1 21.5 MAX.. HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260C. 2 TIM1213-10L RF PERFORMANCE Pout(dBm) Output Power (Pout) vs. Frequency VDS=9V IDS4.0A 42 Pin=34.5 dBm 41 40 39 38 12.7 12.95 13.2 Frequency(GHz) Output Power(Pout) vs. Input Power(Pin) 44 freq.=13.2GHz 43 VDS=9V 50 IDS4.0A Pout Pout(dBm) 41 40 40 39 30 38 add 37 20 36 35 10 27 29 31 33 Pin(dBm) 3 35 37 add(%) 42 TIM1213-10L Power Dissipation(PT) vs. Case Temperature(Tc) PT(W) 60 30 0 0 40 80 120 160 200 Tc( C ) IM3 vs. Output Power Characteristics -10 VDS=9V -20 freq.=13.2GHz f=5MHz IM3(dBc) -30 -40 -50 -60 24 26 28 30 Pout(dBm) @Single carrier level 4 32 34