2N3019
2N3020
NPN SILICON TRANSISTOR DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3019, 2N3020
types are NPN silicon transistors designed for general
purpose amplifier applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS
Collector-Base Voltage VCBO 140 V
Collector-Emitter Voltage VCEO 80 V
Emitter-Base Voltage VEBO 7.0 V
Continuous Collector Current IC 1.0 A
Power Dissipation PD 0.8 W
Power Dissipation (TC=25°C) PD 5.0 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
2N3019 2N3020
SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS
ICBO V
CB=90V - 10 - 10 nA
ICBO V
CB=90V, TA=150°C - 10 - 10 μA
IEBO V
EB=5.0V - 10 - 10 nA
BVCBO I
C=100μA 140 - 140 - V
BVCEO I
C=30mA 80 - 80 - V
BVEBO I
E=100μA 7.0 - 7.0 - V
VCE(SAT) I
C=150mA, IB=15mA - 0.2 - 0.2 V
VCE(SAT) I
C=500mA, IB=50mA - 0.5 - 0.5 V
VBE(SAT) I
C=150mA, IB=15mA - 1.1 - 1.1 V
hFE V
CE=10V, IC=100μA 50 - 30 100
hFE V
CE=10V, IC=10mA 90 - 40 120
hFE V
CE=10V, IC=150mA 100 300 40 120
hFE V
CE=10V, IC=150mA, TA=-55°C 40 - - -
hFE V
CE=10V, IC=500mA 50 - 30 100
hFE V
CE=10V, IC=1.0A 15 - 15 -
fT V
CE=10V, IC=50mA, f=20MHz 100 - 100 - MHz
Cob V
CB=10V, IE=0, f=1.0MHz - 12 - 12 pF
Cib V
EB=0.5V, IC=0, f=1.0MHz - 60 - 60 pF
rb’Cc V
CE=10V, IC=10mA, f=4.0MHz - 400 - 400 ps
NF VCE=10V, IC=100μA, f=1.0kHz,
R
S=1.0kΩ - 4.0 - - dB
TO-39 CASE
R1 (11-June 2012)
www.centralsemi.com
2N3019
2N3020
NPN SILICON TRANSISTOR
TO-39 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING: FULL PART NUMBER
www.centralsemi.com
R1 (11-June 2012)
