SCHOTTKY RECTIFIER 2.1 Amp
10MQ040NPbF
Bulletin PD-20772 rev. A 07/04
1
Major Ratings and Characteristics
IFDC 2.1 A
VRRM 40 V
IFSM @ tp = 5 µs sine 120 A
VF@ 1.5Apk, TJ=125°C 0.56 V
TJrange - 55 to 150 °C
Characteristics Value Units The 10MQ040NPbF surface mount Schottky rectifier has been
designed for applications requiring low forward drop and very small
foot prints on PC boards. Typical applications are in disk drives,
switching power supplies, converters, free-wheeling diodes, battery
charging, and reverse battery protection.
Small foot print, surface mountable
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Lead-Free ("PbF" suffix)
Description/ Features
www.irf.com
Case Styles
10MQ040NPbF
SMA
IF(AV) = 2.1Amp
VR = 40V
10MQ040NPbF
Bulletin PD-20772 rev. A 07/04
2www.irf.com
VFM Max. Forward Voltage Drop (1) 0.54 V @ 1A
* See Fig. 1 0.62 V @ 1.5A
0.49 V @ 1A
0.56 V @ 1.5A
IRM Max. Reverse Leakage Current (1) 0.5 mA TJ = 25 °C
* See Fig. 2 26 mA TJ = 125 °C
VF(TO) Threshold Voltage 0.36 V TJ = TJ max.
rtForward Slope Resistance 104 mΩ
CTTypical Junction Capacitance 38 pF VR = 10VDC, TJ = 25°C, test signal = 1Mhz
LSTypical Series Inductance 2.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change 10000 V/µs
(Rated VR)
Part number 10MQ040NPbF
VRMax. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V) 40
Voltage Ratings
Absolute Maximum Ratings
TJ = 25 °C
TJ = 125 °C
VR = rated VR
Electrical Specifications
Parameters 10MQ Units Conditions
(1) Pulse Width < 300µs, Duty Cycle < 2%
TJMax. Junction Temperature Range (*) - 55 to 150 °C
Tstg Max. Storage Temperature Range - 55 to 150 °C
RthJA Max. Thermal Resistance Junction 80 °C/W DC operation
to Ambient
wt Approximate Weight 0.07(0.002) g (oz.)
Case Style SMA Similar D-64
Device Marking IR1F
Thermal-Mechanical Specifications
Parameters 10MQ Units Conditions
IF(AV) Max. Average Forward Current 1.5 A 50% duty cycle @ TL = 123 °C, rectangular wave form.
* See Fig. 4 On PC board 9mm2 island(.013mm thick copper pad area)
IFSM Max. Peak One Cycle Non-Repetitive 120 5µs Sine or 3µs Rect. pulse
Surge Current * See Fig. 6 30 10ms Sine or 6ms Rect. pulse
EAS Non-Repetitive Avalanche Energy 3.0 mJ TJ = 25 °C, IAS = 1A, L = 6mH
IAR Repetitive Avalanche Current 1.0 A
Parameters 10MQ Units Conditions
AFollowing any rated
load condition and
with rated VRRM applied
< thermal runaway condition for a diode on its own heatsink
(*) dPtot 1
dTj Rth( j-a)
10MQ040NPbF
Bulletin PD-20772 rev. A 07/04
3
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Fig. 2 - Typical Peak Reverse Current
Vs. Reverse Voltage
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
Fig. 1 - Maximum Forward Voltage Drop Characteristics
0.0001
0.001
0.01
0.1
1
10
100
0 5 10 15 20 25 30 35 40
R
R
125°C
100°C
75°C
50°C
25°C
Reverse Current - I (mA)
T = 150°C
J
Reverse Voltage - V (V)
10
100
0 5 10 15 20 25 30 35 40
T = 25°C
J
R
T
Junction Capacitance - C (pF)
Reverse Voltage - V (V)
0.1
1
10
0.2 0.4 0.6 0.8 1 1.2 1.4 1.
6
Tj = 150˚C
Tj = 125˚C
Tj = 25˚C
Forward Voltage Drop - VFM
(V)
Instantaneous Forward Curent - IF (A)
10MQ040NPbF
Bulletin PD-20772 rev. A 07/04
4www.irf.com
Fig. 4 - Maximum Average Forward Current
Vs. Allowable Lead Temperature
Fig. 5 - Maximum Average Forward Dissipation
Vs. Average Forward Current
Fig. 6 - Maximum Peak Surge Forward Current Vs. Pulse Duration
10
100
10 100 1000 10000
FSM
Non-Repetitive Surge Current - I (A)
p
Square Wave Pulse Duration - t (microsec )
At Any Rated Load Condition
And With Rat ed V Applied
Fo ll o w in g Su rg e
RRM
(2) Formula used: TC = TJ - (Pd + PdREV) x RthJC
;
Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6);
PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1
= 80% rated VR
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0 0.4 0.8 1.2 1.6 2 2.4
DC
Averag e Power Loss - (Watt s)
F( A V )
RM S Li m it
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
Average Forwa rd Current - I (A)
70
80
90
100
110
120
130
140
150
0 0.4 0.8 1.2 1.6 2 2.4
DC
Allowable Case Temperature - (°C)
F( A V )
se e no te ( 2)
Sq uare wa ve (D = 0.50)
80% Rated V a pplied
R
Avera ge Forward Current - I (A)
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
10MQ040NPbF
Bulletin PD-20772 rev. A 07/04
5
www.irf.com
IR LOGO
PYWWX
2nd digit of the YEAR
SITE ID
WEEK
IR1F
CURRENT
VOLTAGE
"Y" = 1st digit of the YEAR "standard product"
"P" = "Lead-Free"
2.50 (.098)
2.90 (.114)
4.00 (.157)
4.60 (.181)
1.40 (.055)
1.60 (.062)
.152 (.006)
.305 (.012)
2.00 (.078)
2.44 (.096)
0.76 (.030)
1.52 (.060)
.103 (.004)
.203 (.008)
4.80 (.188)
5.28 (.208)
2.10 MAX.
(.085 MAX. )
5.53 (.218)
1.27 MIN.
(.050 MIN.)
1.47 MIN.
(.058 MIN.)
SOLDERING PAD
CATHODE ANODE
1 2
12
POLARITY PART NUMBER
Device Marking: IR1F
Dimensions in millimeters and (inches)
Outline SMA
For recommended footprint and soldering techniques refer to application note #AN-994
Outline Table
Marking & Identification
Each device has 2 rows for identification. The first row designates the device as manufactured by International
Rectifier, indicated by the letters "IR", and the Part Number (indicates the current, the voltage rating and
Schottky Generation). The second row indicates the year, the week of manufacturing and the Site ID.
10MQ040NPbF
Bulletin PD-20772 rev. A 07/04
6www.irf.com
Tape & Reel Information
Dimensions in millimetres and (inches)
Ordering Information Table
Device Code
15
24
3
1- Current Rating
2- M = SMA
3- Q = Schottky Q Series
4- Voltage Rating (040 = 40V)
5- N = New SMA
6-y none= Box (1000 pieces)
y TR = Tape & Reel (7500 pieces)
7-y none = Standard Production
y PbF = Lead-Free
10 M Q 040 N TR PbF
67
10MQ040NPbF
Bulletin PD-20772 rev. A 07/04
7
www.irf.com
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 07/04
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level and Lead-Free.
Qualification Standards can be found on IR's Web site.
10MQ040N
********************************************
* This model has been developed by *
* Wizard SPICE MODEL GENERATOR (1999) *
* (International Rectifier Corporation) *
* Contain Proprietary Information *
********************************************
* SPICE Model Diode is composed by a *
* simple diode plus paralled VCG2T *
********************************************
.SUBCKT 10MQ040N ANO CAT
D1 ANO 1 DMOD (0.00472)
*Define diode model
.MODEL DMOD D(IS=1.29526323971343E-04A,N=1.14666404869581,BV=52V,
+ IBV=0.260404749526768A,RS= 0.00048144,CJO=2.04792476092255E-08,
+ VJ=1.82174923822158,XTI=2, EG=0.779470593365538)
********************************************
*Implementation of VCG2T
VX 1 2 DC 0V
R1 2 CAT TRES 1E-6
.MODEL TRES RES(R=1,TC1=-43.3354342653501)
GP1 ANO CAT VALUE={-ABS(I(VX))*(EXP((((-4.190325E-03/-43.33543)*((V(2,CAT)*1E6)/(I(VX)+1E-6)-
1))+1)*7.842581E-02*ABS(V(ANO,CAT)))-1)}
********************************************
.ENDS 10MQ040N
