APTCV60TLM24T3G
APTCV60TLM24T3G – Rev 1 April, 2012
www.microsemi.com 1-11
All ratings @ Tj = 25°C unless otherwise specified
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
16
15
182023 22
13
11 12
14
87
29
30
28 27 26
3
32
31
10
19
2
25
4
All multiple inputs and outputs must be shorted together
Example: 10/11/12 ; 7/8 …
Trench & Field Stop IGBT3 Q2, Q3:
VCES = 600V ; IC = 75A @ Tc = 80°C
CoolMOS™ Q1, Q4:
VDSS = 600V ; ID = 70A @ Tc = 80°C
Application
• Solar converter
• Uninterruptible Power Supplies
Features
• Q2, Q3 Trench + Field Stop IGBT3 Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
• Q1, Q4 CoolMOS™
- Ultra low RDSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin emitter for easy drive
• Very low stray inductance
• High level of integration
• Internal thermistor for temperature monitoring
Benefits
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS Compliant
Three level inverter
CoolMOS & Trench + Field Stop IGBT3
Power Module
APTCV60TLM24T3G
APTCV60TLM24T3G – Rev 1 April, 2012
www.microsemi.com 2-11
Q1 & Q4 Ab solute maxi mum rati ngs (per CoolMOS™)
Q1 & Q4 Electrical Characteri stics (per CoolMOS™)
Symbol Characteristic Test Conditions Min Typ Max Unit
VGS = 0V,VDS = 600V Tj = 25°C 350
IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 600V Tj = 125°C 600 µA
RDS(on) Drain – Source on Resistance VGS = 10V, ID = 47.5A 24 mΩ
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 5mA 2.1 3 3.9 V
IGSS Gate – Source Leakage Current VGS = ±20 V, VDS = 0V 200 nA
Q1 & Q4 Dynamic Ch aracteristic s (per CoolMOS™)
Symbol Characteristic Test Conditions Min Typ Max Unit
Ciss Input Capacitance 14.4
Coss Output Capacitance
VGS = 0V ; VDS = 25V
f = 1MHz 17 nF
Qg Total gate Charge 300
Qgs Gate – Source Charge 68
Qgd Gate – Drain Charge
VGS = 10V
VBus = 300V
ID = 95A 102
nC
Td(on) Turn-on Delay Time 21
Tr Rise Time 30
Td(off) Turn-off Delay Time 100
Tf Fall Time
Inductive Switching (125°C)
VGS = 10V
VBus = 400V
ID = 95A
RG = 2.5Ω 45
ns
Eon Turn-on Switching Energy 1350
Eoff Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 10V ; VBus = 400V
ID = 95A ; RG = 2.5Ω 1040
µJ
Eon Turn-on Switching Energy 2200
Eoff Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 10V ; VBus = 400V
ID = 95A ; RG = 2.5Ω 1270 µJ
RthJC Junction to Case Thermal Resistance 0.27
°C/W
Symbol Parameter Max ratings Unit
VDSS Drain - Source Breakdown Voltage 600 V
Tc = 25°C 95
ID Continuous Drain Current Tc = 80°C 70
IDM Pulsed Drain current 260
A
VGS Gate - Source Voltage ±20 V
RDSon Drain - Source ON Resistance 24 mΩ
PD Maximum Power Dissipation Tc = 25°C 462 W
IAR Avalanche current (repetitive and non repetitive) 15 A
EAR Repetitive Avalanche Energy 3
EAS Single Pulse Avalanche Energy 1900 mJ
APTCV60TLM24T3G
APTCV60TLM24T3G – Rev 1 April, 2012
www.microsemi.com 3-11
Q2 & Q3 Absolute maximu m ratings (per IGBT)
Symbol Parameter Max ratings Unit
VCES Collector - Emitter Breakdown Voltage 600 V
TC = 25°C 100
IC Continuous Collector Current TC = 80°C 75
ICM Pulsed Collector Current TC = 25°C 140
A
VGE Gate – Emitter Voltage ±20 V
PD Maximum Power Dissipation TC = 25°C 250 W
RBSOA Reverse Bias Safe Operating Area TJ = 150°C 150A @ 550V
Q2 & Q3 Electrical Characteri stics (per IGBT)
Symbol Characteristic Test Conditions Min Typ Max Unit
ICES Zero Gate Voltage Collector Current VGE = 0V, VCE = 600V 250 µA
Tj = 25°C 1.5 1.9
VCE(sat) Collector Emitter Saturation Voltage VGE =15V
IC = 75A Tj = 150°C 1.7 V
VGE(th) Gate Threshold Voltage VGE = VCE, IC = 600µA 5.0 5.8 6.5 V
IGES Gate – Emitter Leakage Current VGE = 20V, VCE = 0V 600 nA
Q2 & Q3 Dynam i c Ch aracterist ic s (per IGBT)
Symbol Characteristic Test Conditions Min Typ Max Unit
Cies Input Capacitance 4620
Coes Output Capacitance 300
Cres Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz 140
pF
QG Gate charge VGE=±15V, IC=75A
VCE=300V 0.8 µC
Td(on) Turn-on Delay Time 110
Tr Rise Time 45
Td(off) Turn-off Delay Time 200
Tf Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 75A
RG = 4.7Ω 40
ns
Td(on) Turn-on Delay Time 120
Tr Rise Time 50
Td(off) Turn-off Delay Time 250
Tf Fall Time
Inductive Switching (150°C)
VGE = ±15V
VBus = 300V
IC = 75A
RG = 4.7Ω 60
ns
Tj = 25°C 0.35
Eon Turn-on Switching Energy Tj = 150°C 0.6 mJ
Tj = 25°C 2.2
Eoff Turn-off Switching Energy
VGE = ±15V
VBus = 300V
IC = 75A
RG = 4.7Ω Tj = 150°C 2.6 mJ
Isc Short Circuit data VGE ≤15V ; VBus = 360V
tp ≤ 6µs ; Tj = 150°C 380 A
RthJC Junction to Case Thermal Resistance 0.60
°C/W
APTCV60TLM24T3G
APTCV60TLM24T3G – Rev 1 April, 2012
www.microsemi.com 4-11
CR2 & CR3 diode ratings and characteristics (per device)
Symbol Characteristic Test Conditions Min Typ Max Unit
VF Diode + tranzorb Forward Voltage IF = 10A 10 V
RthJC Junction to Case Thermal Resistance 8 °C/W
CR5 & CR6 diode ratings and characteristics (per diode)
Symbol Characteristic Test Conditions Min Typ Max Unit
VRRM Maximum Peak Repetitive Reverse Voltage 600 V
IRM Maximum Reverse Leakage Current VR=600V 25 µA
IF DC Forward Current Tc = 80°C 30 A
IF = 30A 1.8 2.2
IF = 60A 2.2
VF Diode Forward Voltage
IF = 30A Tj = 125°C 1.5
V
Tj = 25°C 25
trr Reverse Recovery Time Tj = 125°C 160 ns
Tj = 25°C 35
Qrr Reverse Recovery Charge
IF = 30A
VR = 400V
di/dt =200A/µs
Tj = 125°C 480 nC
Err Reverse Recovery Energy
IF = 30A
VR = 400V
di/dt =1000A/µs
Tj = 125°C 0.6 mJ
RthJC Junction to Case Thermal Resistance 1.2 °C/W
CR7 & CR8 diode ratings and characteristics (per diode)
Symbol Characteristic Test Conditions Min Typ Max Unit
VRRM Maximum Peak Repetitive Reverse Voltage 1200 V
IRM Maximum Reverse Leakage Current VR=1200V 100 µA
IF DC Forward Current Tc = 80°C 30 A
IF = 30A 2.6 3.1
IF = 60A 3.2
VF Diode Forward Voltage
IF = 30A Tj = 125°C 1.8
V
Tj = 25°C 300
trr Reverse Recovery Time Tj = 125°C 380 ns
Tj = 25°C 360
Qrr Reverse Recovery Charge
IF = 30A
VR = 800V
di/dt =200A/µs
Tj = 125°C 1700 nC
Err Reverse Recovery Energy
IF = 30A
VR = 800V
di/dt =1000A/µs
Tj = 125°C 1.6 mJ
RthJC Junction to Case Thermal Resistance 1.2 °C/W
APTCV60TLM24T3G
APTCV60TLM24T3G – Rev 1 April, 2012
www.microsemi.com 5-11
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic Min Typ Max Unit
R25 Resistance @ 25°C 50 kΩ
∆R25/R25 5 %
B25/85 T
25 = 298.15 K 3952 K
∆B/B TC=100°C 4
%
⎥
⎦
⎤
⎢
⎣
⎡
⎟
⎟
⎠
⎞
⎜
⎜
⎝
⎛−
=
TT
B
R
RT11
exp
25
85/25
25
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 4000 V
TJ Operating junction temperature range -40 175*
TSTG Storage Temperature Range -40 125
TC Operating Case Temperature -40 100
°C
Torque Mounting torque To heatsink M4 2.5 4.7 N.m
Wt Package Weight 110
g
* Tjmax = 150°C for Q1 & Q4
SP3 Package outline (dimensions in mm)
17
12
28
1
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
T: Thermistor temperature
RT: Thermistor value at T
APTCV60TLM24T3G
APTCV60TLM24T3G – Rev 1 April, 2012
www.microsemi.com 6-11
Q2 & Q3 Typical performance curve
Hard
switching
0
15
30
45
60
75
0 20406080100
I
C
(A)
Fmax, Operating Frequency (kHz)
V
CE
=300V
D=50%
R
G
=4.7Ω
T
J
=150°C
T
c
=85°C
Operating Frequency vs Collector Current
Output Character istics (V
GE
=15V)
T
J
=25°C
T
J
=25°C
T
J
=150°C
0
25
50
75
100
125
150
0 0.5 1 1.5 2 2.5 3
V
CE
(V)
I
C
(A)
Output Character istics
V
GE
=15V
V
GE
=13V
V
GE
=19V
V
GE
=9V
0
25
50
75
100
125
150
00.511.522.533.5
V
CE
(V)
I
C
(A)
T
J
= 150°C
Transfert Character is tic s
T
J
=25°C
T
J
=25°C
T
J
=150°C
0
25
50
75
100
125
150
56789101112
V
GE
(V)
I
C
(A)
Energy losses vs Coll ector Current
Eon
Eoff
0
1
2
3
4
5
0 25 50 75 100 125 150
I
C
(A )
E (mJ)
V
CE
= 300V
V
GE
= 15V
R
G
= 4.7Ω
T
J
= 150°C
Eon
Eoff
0
1
2
3
4
5
0 5 10 15 20 25 30 35 40
Gate Resistance (ohms)
E (mJ)
V
CE
= 300V
V
GE
=15V
I
C
= 75A
T
J
= 150°C
Swit ch ing Energ y Losses vs Gate Resi stance Reverse Bias Safe Operating Area
0
25
50
75
100
125
150
175
0 100 200 300 400 500 600 700
V
CE
(V)
I
C
(A)
V
GE
=15V
T
J
=150°C
R
G
=4.7Ω
maximum E ffective Transient Therm al Impeda nc e, Junction to Case vs Pulse Durati on
0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.00001 0.0001 0.001 0.01 0.1 1 10
Rectangular Pulse Durati on in Second s
Thermal Impedance (°C/W)
APTCV60TLM24T3G
APTCV60TLM24T3G – Rev 1 April, 2012
www.microsemi.com 7-11
Q1 & Q4 Typical performance curve
0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pul se Duration (S econd s)
Thermal I mpedance (°C/W)
Maximu m Effective Transient Thermal I mpedance, Junction to Case vs Pulse Duration
4V
4.5V
5V
5.5V
6V
6.5V
0
80
160
240
320
400
480
560
640
720
0 5 10 15 20 25
VDS, Drain to Sou rce Voltage (V)
ID, Drain Current (A)
V
GS
=15&10V
Low Vol tage Outp ut Char acteristi cs Transfert Characteristics
T
J
=25°C
T
J
=125°C
0
40
80
120
160
200
240
280
01234567
VGS, Gate to Source Voltage (V)
ID, Drain Cur ren t (A)
V
DS
> I
D
(on)xR
DS
(on)MAX
250µs pulse test @ < 0.5 duty cycle
RDS(on) vs Drain Current
V
GS
=10V
V
GS
=20V
0.9
0.95
1
1.05
1.1
1.15
1.2
1.25
1.3
0 40 80 120 160 200 240 280
ID, Drain Curr ent (A)
RDS(on) Drain to Source ON Resistance
Normalized to
V
GS
=10V @ 95A
0
20
40
60
80
100
25 50 75 100 125 150
TC, Case Temperature (°C)
ID, DC Drain Current (A )
DC Drain Current vs Case Temperature
APTCV60TLM24T3G
APTCV60TLM24T3G – Rev 1 April, 2012
www.microsemi.com 8-11
0.8
0.9
1.0
1.1
1.2
25 50 75 100 125 150
T
J
, Junction Temperatur e (°C)
Breakdown V oltage vs Temperature
BV
DSS
, Drain to Source Breakdown
Voltage (Normalized)
ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
25 50 75 100 125 150
T
J
, Junction Temperature (°C)
R
DS
(on), Drain to Source ON resistance
(Normalized)
V
GS
=10V
I
D
= 95A
Threshold Voltage vs Temperature
0.6
0.7
0.8
0.9
1.0
1.1
25 50 75 100 125 150
T
C
, Case Temperature (°C)
V
GS
(TH), Threshold Voltage
(Normalized)
Maxim um Safe Operating Area
10 ms
1 ms
100 µs
1
10
100
1000
1 10 100 1000
V
DS
, Drain to Source Voltage (V)
I
D
, Drain Cur ren t (A)
limited b
y
R
DS
on
Single pulse
T
J
=150°C
T
C
=25°C
Ciss
Crss
Coss
10
100
1000
10000
100000
1000000
0 1020304050
V
DS
, Drain to Sou rce Voltage (V)
C, Capaci tan ce (pF)
Capacitance vs Drain to Source Voltage
V
DS
=120V
V
DS
=300V
V
DS
=480V
0
2
4
6
8
10
12
0 40 80 120 160 200 240 280 320
Gate Charge (nC)
V
GS
, Gate to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
I
D
=95A
T
J
=25°C
APTCV60TLM24T3G
APTCV60TLM24T3G – Rev 1 April, 2012
www.microsemi.com 9-11
T
J
=25°C
T
J
=150°C
1
10
100
1000
0.3 0.5 0.7 0.9 1.1 1.3 1.5
V
SD
, Source to Drain Voltage (V)
I
DR
, Reverse Drain Current (A)
Source to Drain Diode Forward Voltage
Delay Times vs Current
td(on)
td(off)
0
20
40
60
80
100
120
140
0 20406080100120140160
I
D
, Drain Current (A)
t
d(on)
and t
d(off)
(ns)
V
DS
=400V
R
G
=2.5Ω
T
J
=125°C
L=100µH
Rise and Fall times vs Current
t
r
t
f
0
10
20
30
40
50
60
70
0 20 40 60 80 100 120 140 160
I
D
, Drain Cur rent (A)
t
r
and t
f
(ns)
V
DS
=400V
R
G
=2.5Ω
T
J
=125°C
L=100µH
Switching Energy vs Current
E
on
E
off
0
1
2
3
4
0 20 40 60 80 100 120 140 160
I
D
, Drain Cur rent (A)
Switching Energy (mJ)
V
DS
=400V
R
G
=2.5Ω
T
J
=125°C
L=100µH
E
on
E
off
0
1
2
3
4
5
0 5 10 15 20 25
Gate Resistance (Ohms)
Switching E ner gy (m J)
Switchi ng En ergy vs Gate Resistance
V
DS
=400V
I
D
=95A
T
J
=125°C
L=100µH
hard
switching
0
50
100
150
200
250
300
10 20 30 40 50 60 70 80 90
I
D
, Drain Current (A)
Frequency (kHz)
Operating Frequency vs Drain Current
V
DS
=400V
D=50%
R
G
=2.5ΩT
J
=125°C
T
=75°C
APTCV60TLM24T3G
APTCV60TLM24T3G – Rev 1 April, 2012
www.microsemi.com 10 - 11
CR5 & CR6 Typical performance curve
Forward Characteristic o f d io de
T
J
=25°C
T
J
=125°C
0
20
40
60
80
0.0 0.4 0.8 1.2 1.6 2.0 2.4
V
F
(V)
I
F
(A)
Energy losses vs Collector Current
0
0.25
0.5
0.75
1
0 20406080
I
C
(A)
E (mJ)
V
CE
= 400V
V
GE
= 15V
R
G
= 2.5Ω
T
J
= 125°C
0
0.25
0.5
0.75
1
0246810
Gate Resistance (ohms)
E (mJ)
V
CE
= 400V
V
GE
=15V
I
C
= 30A
T
J
= 125°C
Switchi n g E nergy Losses vs Gate Resistance
Maximu m E f fective Transient Thermal Impedance, Junction to Case vs Pul se Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.00001 0.0001 0.001 0.01 0.1 1 10
Rectangular Pulse Duration (S econd s)
Thermal Impedance (°C/W)
APTCV60TLM24T3G
APTCV60TLM24T3G – Rev 1 April, 2012
www.microsemi.com 11 - 11
CR7 & CR8 Typical performance curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.00001 0.0001 0.001 0.01 0.1 1 10
Rectangular Pulse Duration (S econd s )
Thermal Impedance (°C/W)
Maxim um Effective Transient Thermal Imp edance, Juncti on to Case vs Pul se Dur atio n
T
J
=25°C
T
J
=125°C
0
20
40
60
80
0.0 1.0 2.0 3.0 4.0
V
F
, Anode to Cathode Vol tage (V )
I
F
, Forward Cu rr ent (A)
Forward Current vs Forward Voltage
Energy losses vs Collector Cur rent
0
0.5
1
1.5
2
2.5
0 20406080
I
C
(A)
E (mJ)
V
CE
= 800V
V
GE
= 15V
R
G
= 5Ω
T
J
= 125°C
0.6
0.8
1
1.2
1.4
1.6
1.8
0102030
Gate resistance (ohms)
E (mJ)
Switchi ng Energy Losses vs Gate Resistance
V
CE
= 800V
V
GE
=15V
I
C
= 30A
T
J
= 125°C
Microsemi reserves the right to change, without notice, the specifications and information contained herein
