APTCV60TLM24T3G Three level inverter CoolMOS & Trench + Field Stop IGBT3 Power Module Trench & Field Stop IGBT3 Q2, Q3: VCES = 600V ; IC = 75A @ Tc = 80C CoolMOSTM Q1, Q4: VDSS = 600V ; ID = 70A @ Tc = 80C Application * Solar converter * Uninterruptible Power Supplies Features * Q2, Q3 Trench + Field Stop IGBT3 Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated * - 28 27 26 25 * * * * 20 19 18 23 22 29 16 30 15 31 14 32 13 2 3 4 7 8 10 11 12 Kelvin emitter for easy drive Very low stray inductance High level of integration Internal thermistor for temperature monitoring Benefits * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Low profile * RoHS Compliant All ratings @ Tj = 25C unless otherwise specified These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1 - 11 APTCV60TLM24T3G - Rev 1 April, 2012 All multiple inputs and outputs must be shorted together Example: 10/11/12 ; 7/8 ... Q1, Q4 CoolMOSTM Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated Very rugged APTCV60TLM24T3G Q1 & Q4 Absolute maximum ratings (per CoolMOSTM) Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25C Tc = 80C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Max ratings 600 95 70 260 20 24 462 15 3 1900 Unit V A V m W A mJ Q1 & Q4 Electrical Characteristics (per CoolMOSTM) Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V Min Typ Tj = 25C Tj = 125C VGS = 10V, ID = 47.5A VGS = VDS, ID = 5mA VGS = 20 V, VDS = 0V 2.1 3 Min Typ 14.4 17 Max 350 600 24 3.9 200 Unit Max Unit A m V nA Q1 & Q4 Dynamic Characteristics (per CoolMOSTM) Total gate Charge Qgs Gate - Source Charge Qgd Gate - Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy RthJC Junction to Case Thermal Resistance VGS = 10V VBus = 300V ID = 95A Inductive Switching (125C) VGS = 10V VBus = 400V ID = 95A RG = 2.5 Inductive switching @ 25C VGS = 10V ; VBus = 400V ID = 95A ; RG = 2.5 Inductive switching @ 125C VGS = 10V ; VBus = 400V ID = 95A ; RG = 2.5 nF 300 nC 68 102 21 30 ns 100 45 1350 J 1040 2200 J 1270 0.27 www.microsemi.com April, 2012 Qg Test Conditions VGS = 0V ; VDS = 25V f = 1MHz C/W 2 - 11 APTCV60TLM24T3G - Rev 1 Symbol Characteristic Input Capacitance Ciss Coss Output Capacitance APTCV60TLM24T3G Q2 & Q3 Absolute maximum ratings (per IGBT) Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage TC = 25C TC = 80C TC = 25C Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25C TJ = 150C Max ratings 600 100 75 140 20 250 150A @ 550V Unit V A V W Q2 & Q3 Electrical Characteristics (per IGBT) Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25C VGE =15V IC = 75A Tj = 150C VGE = VCE, IC = 600A VGE = 20V, VCE = 0V Min Typ 5.0 1.5 1.7 5.8 Min Typ Max Unit 250 1.9 A 6.5 600 V nA Max Unit V Q2 & Q3 Dynamic Characteristics (per IGBT) Input Capacitance Output Capacitance Reverse Transfer Capacitance QG Gate charge Td(on) Tr Td(off) Tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Td(on) Turn-on Delay Time Tr Td(off) Tf Rise Time Turn-off Delay Time Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Isc Short Circuit data RthJC VGE = 0V VCE = 25V f = 1MHz VGE=15V, IC=75A VCE=300V Inductive Switching (25C) VGE = 15V VBus = 300V IC = 75A RG = 4.7 Inductive Switching (150C) VGE = 15V VBus = 300V IC = 75A RG = 4.7 VGE = 15V Tj = 25C VBus = 300V Tj = 150C IC = 75A Tj = 25C RG = 4.7 Tj = 150C VGE 15V ; VBus = 360V tp 6s ; Tj = 150C Junction to Case Thermal Resistance 4620 300 140 pF 0.8 C 110 45 200 40 ns 120 50 250 60 0.35 0.6 2.2 2.6 ns mJ mJ 380 A 0.60 www.microsemi.com C/W 3 - 11 April, 2012 Cies Coes Cres Test Conditions APTCV60TLM24T3G - Rev 1 Symbol Characteristic APTCV60TLM24T3G CR2 & CR3 diode ratings and characteristics (per device) Symbol Characteristic VF RthJC Diode + tranzorb Forward Voltage Junction to Case Thermal Resistance Test Conditions Min IF = 10A Typ Max Unit 8 V C/W 10 CR5 & CR6 diode ratings and characteristics (per diode) Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage Test Conditions Min 600 Typ VR=600V 25 Tc = 80C IF = 30A IF = 60A IF = 30A trr Reverse Recovery Time Qrr Reverse Recovery Charge di/dt =200A/s Err Reverse Recovery Energy IF = 30A VR = 400V IF = 30A VR = 400V Max Tj = 125C Tj = 25C Tj = 125C Tj = 25C 30 1.8 2.2 1.5 25 160 35 Tj = 125C 480 Tj = 125C 0.6 Unit V A A 2.2 V ns nC mJ di/dt =1000A/s RthJC Junction to Case Thermal Resistance 1.2 C/W Max Unit V A CR7 & CR8 diode ratings and characteristics (per diode) Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM Maximum Reverse Leakage Current IF VF Test Conditions Typ VR=1200V DC Forward Current Diode Forward Voltage Min 1200 100 Tc = 80C IF = 30A IF = 60A IF = 30A trr Reverse Recovery Time Qrr Reverse Recovery Charge di/dt =200A/s Err Reverse Recovery Energy IF = 30A VR = 800V IF = 30A VR = 800V Tj = 125C Tj = 25C Tj = 125C Tj = 25C 30 2.6 3.2 1.8 300 380 360 Tj = 125C 1700 Tj = 125C 1.6 A 3.1 V ns nC mJ di/dt =1000A/s 1.2 C/W April, 2012 Junction to Case Thermal Resistance www.microsemi.com 4 - 11 APTCV60TLM24T3G - Rev 1 RthJC APTCV60TLM24T3G Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 R25/R25 B25/85 B/B Characteristic Resistance @ 25C Min Typ 50 5 3952 4 Max Unit k % K % Min 4000 -40 -40 -40 2.5 Typ Max Unit V T25 = 298.15 K TC=100C RT = R25 T: Thermistor temperature 1 1 RT: Thermistor value at T - exp B25 / 85 T25 T Thermal and package characteristics Symbol VISOL TJ TSTG TC Torque Wt Characteristic RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 175* 125 100 4.7 110 C N.m g * Tjmax = 150C for Q1 & Q4 12 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com www.microsemi.com 5 - 11 APTCV60TLM24T3G - Rev 1 28 17 1 April, 2012 SP3 Package outline (dimensions in mm) APTCV60TLM24T3G Q2 & Q3 Typical performance curve Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 75 60 VCE=300V D=50% R G=4.7 T J=150C 45 T c =85C 30 Hard switching 15 0 0 20 40 60 80 100 IC (A) Output Characteristics (VGE=15V) Output Characteristics 150 150 TJ=25C TJ = 150C VGE=13V 100 TJ=150C IC (A) IC (A) 100 75 VGE=15V 75 50 50 25 25 VGE=9V TJ=25C 0 0 0.5 1 1.5 VCE (V) 0 2 2.5 0 3 5 TJ=25C 125 1 1.5 2 VCE (V) VCE = 300V VGE = 15V RG = 4.7 TJ = 150C 4 E (mJ) 100 75 TJ=150C 50 0.5 2.5 3 3.5 Energy losses vs Collector Current Transfert Characteristics 150 IC (A) VGE=19V 125 125 3 Eoff 2 Eon 1 25 TJ=25C 0 0 5 6 7 8 9 10 11 0 12 25 50 75 100 125 150 IC (A) VGE (V) Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 5 175 Eoff 150 125 Eon 3 IC (A) E (mJ) 4 2 VCE = 300V VGE =15V IC = 75A TJ = 150C 1 100 75 50 VGE=15V TJ=150C RG=4.7 25 0 0 0 5 10 15 20 25 30 Gate Resistance (ohms) 35 40 0 100 200 300 400 VCE (V) 500 600 700 Thermal Impedance (C/W) 0.6 0.5 0.4 0.3 0.2 0.1 0.9 0.7 0.5 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds www.microsemi.com 6 - 11 APTCV60TLM24T3G - Rev 1 April, 2012 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.7 APTCV60TLM24T3G Q1 & Q4 Typical performance curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (C/W) 0.3 0.9 0.25 0.7 0.2 0.5 0.15 0.3 0.1 0.1 0.05 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Transfert Characteristics Low Voltage Output Characteristics 280 720 VGS=15&10V 6.5V 560 ID, Drain Current (A) 6V 480 400 5.5V 320 240 5V 160 4.5V 80 4V 0 200 160 120 80 TJ=125C 40 TJ=25C 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) 25 0 Normalized to VGS=10V @ 95A 1.25 1.2 VGS=10V 1.15 1.1 1 2 3 4 5 6 VGS, Gate to Source Voltage (V) 7 DC Drain Current vs Case Temperature 100 RDS(on) vs Drain Current 1.3 VGS=20V 1.05 1 0.95 ID, DC Drain Current (A) 0.9 80 60 40 20 0 0 40 80 120 160 200 240 280 ID, Drain Current (A) www.microsemi.com 25 50 75 100 125 TC, Case Temperature (C) 150 April, 2012 RDS(on) Drain to Source ON Resistance VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle 240 7 - 11 APTCV60TLM24T3G - Rev 1 ID, Drain Current (A) 640 1.1 1.0 0.9 0.8 25 50 75 100 125 150 ON resistance vs Temperature 3.0 2.0 1.5 1.0 0.5 0.0 25 TJ, Junction Temperature (C) 1000 1.0 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area Threshold Voltage vs Temperature 1.1 0.9 0.8 0.7 limited by RDSon 100 100 s 1 ms Single pulse TJ=150C TC=25C 10 0.6 10 ms 1 25 50 75 100 125 150 1 Coss Ciss 10000 1000 Crss 100 10 1000 10 20 30 40 50 VDS, Drain to Source Voltage (V) 12 ID=95A TJ=25C 10 VDS=120V VDS=300V 8 VDS=480V 6 4 2 0 0 40 80 120 160 200 240 280 320 Gate Charge (nC) April, 2012 0 100 Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 1000000 100000 10 VDS, Drain to Source Voltage (V) TC, Case Temperature (C) C, Capacitance (pF) VGS=10V ID= 95A 2.5 www.microsemi.com 8 - 11 APTCV60TLM24T3G - Rev 1 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTCV60TLM24T3G APTCV60TLM24T3G Delay Times vs Current 140 Rise and Fall times vs Current 70 td(off) 100 VDS=400V RG=2.5 TJ=125C L=100H 80 60 40 VDS=400V RG=2.5 TJ=125C L=100H 60 50 tr and tf (ns) 40 30 tr 20 td(on) 20 10 0 0 0 20 40 60 80 100 120 140 160 0 20 40 ID, Drain Current (A) Switching Energy vs Gate Resistance Switching Energy (mJ) Switching Energy (mJ) Eon Eoff 2 1 VDS=400V ID=95A TJ=125C L=100H 4 3 Eoff Eon 2 1 0 0 0 20 40 60 80 100 120 140 160 ID, Drain Current (A) Operating Frequency vs Drain Current VDS=400V D=50% RG=2.5T J=125C T =75C 250 200 150 100 hard switching 50 0 30 40 50 60 70 ID, Drain Current (A) 80 15 20 25 90 TJ=150C 100 TJ=25C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V) April, 2012 20 10 Source to Drain Diode Forward Voltage 1000 0 10 5 Gate Resistance (Ohms) IDR, Reverse Drain Current (A) 300 Frequency (kHz) 80 100 120 140 160 5 VDS=400V RG=2.5 TJ=125C L=100H 3 60 ID, Drain Current (A) Switching Energy vs Current 4 tf www.microsemi.com 9 - 11 APTCV60TLM24T3G - Rev 1 td(on) and td(off) (ns) 120 APTCV60TLM24T3G CR5 & CR6 Typical performance curve Forward Characteristic of diode 80 IF (A) 60 TJ=125C 40 TJ=25C 20 0 0.0 0.4 0.8 1.2 VF (V) 1.6 2.0 2.4 Switching Energy Losses vs Gate Resistance 1 0.75 0.75 0.5 E (mJ) E (mJ) Energy losses vs Collector Current 1 VCE = 400V VGE = 15V RG = 2.5 TJ = 125C 0.25 20 40 60 VCE = 400V VGE =15V IC = 30A TJ = 125C 0.25 0 0 0.5 0 80 0 2 4 6 8 Gate Resistance (ohms) IC (A) 10 1 0.8 0.6 0.4 0.2 0.9 0.7 0.5 0.3 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) April, 2012 1.2 www.microsemi.com 10 - 11 APTCV60TLM24T3G - Rev 1 Thermal Impedance (C/W) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.4 APTCV60TLM24T3G CR7 & CR8 Typical performance curve Forward Current vs Forward Voltage IF, Forward Current (A) 80 TJ=125C 60 40 20 TJ=25C 0 0.0 1.0 2.0 3.0 4.0 VF, Anode to Cathode Voltage (V) Switching Energy Losses vs Gate Resistance 1.8 2 1.6 1.4 1.5 E (mJ) E (mJ) Energy losses vs Collector Current 2.5 VCE = 800V VGE = 15V RG = 5 TJ = 125C 1 0.5 20 40 60 VCE = 800V VGE =15V IC = 30A TJ = 125C 1 0.8 0 0 1.2 0.6 80 0 10 IC (A) 20 30 Gate resistance (ohms) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.2 1 0.8 0.9 0.7 0.5 0.6 0.2 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 April, 2012 0.4 Rectangular Pulse Duration (Seconds) Microsemi reserves the right to change, without notice, the specifications and information contained herein www.microsemi.com 11 - 11 APTCV60TLM24T3G - Rev 1 Thermal Impedance (C/W) 1.4