Si2336DS Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.042 at VGS = 4.5 V 5.2 0.046 at VGS = 2.5 V 4.9 0.052 at VGS = 1.8 V 4.1 VDS (V) 30 * TrenchFET(R) Power MOSFET * 100 % Rg Tested * Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 Qg (Typ.) 5.7 nC APPLICATIONS TO-236 (SOT-23) G 1 3 S D * DC/DC Converters * Boost Converters D G 2 Top View Si2336DS (N4)* S * Marking Code Ordering Information: Si2336DS-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS 8 TC = 25 C Continuous Drain Current (TJ = 150 C) 4.1 ID TA = 25 C 4.3b, c TA = 70 C 3.5b, c IDM 1.5 IS TA = 25 C 1b, c TC = 25 C 1.8 TC = 70 C Maximum Power Dissipation 1.1 PD TA = 25 C Soldering Recommendations (Peak W 1.25b, c 0.8b, c TA = 70 C Operating Junction and Storage Temperature Range A 20 TC = 25 C Continuous Source-Drain Diode Current V 5.2 TC = 70 C Pulsed Drain Current Unit TJ, Tstg - 55 to 150 Temperature)d, e C 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Maximum Junction-to-Ambientb, d t5s RthJA 80 100 Maximum Junction-to-Foot (Drain) Steady State RthJF 55 70 Unit C/W Notes: a. TC = 25 C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 130 C/W. Document Number: 71978 S13-0630-Rev. B, 25-Mar-13 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2336DS Vishay Siliconix SPECIFICATIONS (TJ = 25 C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 A 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS/TJ VDS Temperature Coefficient V 31 ID = 250 A mV/C VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = 250 A 1 V IGSS VDS = 0 V, VGS = 8 V 100 nA VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55 C 10 Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea RDS(on) gfs Forward Transconductancea VDS 5 V, VGS = 10 V - 2.7 0.4 10 A A VGS 4.5 V, ID = 3.8 A 0.034 0.042 VGS 2.5 V, ID = 3.6 A 0.038 0.046 VGS 1.8 V, ID = 2 A 0.041 0.052 VDS = 15 V, ID = 3.8 A 30 S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg 560 VDS = 15 V, VGS = 0 V, f = 1 MHz tr Rise Time td(off) Turn-Off Delay Time Fall Time Turn-On Delay Time 10 15 5.7 8.6 VDS = 15 V, VGS = 4.5 V, ID = 3.4 A 0.85 VDD = 15 V, RL = 4.3 ID 3.5 A, VGEN = 4.5 V, Rg = 1 3 6 6 12 10 20 20 40 10 20 5 10 10 20 VDD = 15 V, RL = 4.3 ID 3.5 A, VGEN = 8 V, Rg = 1 tf Fall Time 0.6 td(on) td(off) Turn-Off Delay Time nC 0.75 f = 1 MHz tf tr Rise Time pF VDS = 15 V, VGS = 8 V, ID = 3.4 A td(on) Turn-On Delay Time 60 27 17 30 10 20 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 C 1.5 20 IS = 3.5 A, VGS 0 V IF = 3.5 A, dI/dt = 100 A/s, TJ = 25 C A 0.8 1.2 V 15 30 ns 6 12 nC 8 7 ns Notes: a. Pulse test; pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 For technical questions, contact: pmostechsupport@vishay.com Document Number: 71978 S13-0630-Rev. B, 25-Mar-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2336DS Vishay Siliconix TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 10 20 V GS = 5 V thru 2 V 8 V GS = 1.5 V ID - Drain Current (A) ID - Drain Current (A) 16 12 8 6 4 T C = 25 C 2 4 V GS = 1 V T C = 125 C V GS = 0.5 V T C = - 55 C 0 0 0 0.5 1.0 1.5 2.0 2.5 0 3.0 0.3 1.2 1.5 Transfer Characteristics 0.06 800 0.05 600 C - Capacitance (pF) RDS(on) - On-Resistance () Output Characteristics V GS = 1.8 V V GS = 2.5 V V GS = 4.5 V 0.03 0.9 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 0.04 0.6 Ciss 400 200 Coss 0.02 Crss 0 0 4 8 12 16 20 0 10 15 20 25 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 30 1.6 8 V GS = 4.5 V, V GS = 2.5 V ID = 3.8 A ID = 4.3 A V DS = 7.5 V V DS = 24 V 4 V DS = 15 V (Normalized) 1.4 6 RDS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 5 V GS = 1.8 V 1.2 1.0 2 0.8 0 0 2 4 6 8 10 0.6 - 50 - 25 Document Number: 71978 S13-0630-Rev. B, 25-Mar-13 25 50 75 100 125 150 TJ - Junction Temperature (C) Qg - Total Gate Charge (nC) Gate Charge 0 On-Resistance vs. Junction Temperature For technical questions, contact: pmostechsupport@vishay.com www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2336DS Vishay Siliconix TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 0.10 100 RDS(on) - On-Resistance () IS - Source Current (A) ID = 3.8 A T J = 150 C 10 T J = 25 C 1 0.08 0.06 T J = 125 C 0.04 T J = 25 C 0.02 0 0.1 0 0.2 0.4 0.6 0.8 1.0 0 1.2 1 VSD - Source-to-Drain Voltage (V) 2 3 4 5 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 0.8 40 0.7 30 Power (W) VGS(th) (V) 0.6 0.5 ID = 250 A 20 0.4 10 0.3 0.2 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 100 1000 Time (s) TJ - Temperature (C) Single Pulse Power Threshold Voltage 100 Limited by R DS(on)* ID - Drain Current (A) 10 100 s 1 ms 1 10 ms 100 ms 0.1 1 s, 10 s DC TA = 25 C Single Pulse 0.01 0.1 BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 For technical questions, contact: pmostechsupport@vishay.com Document Number: 71978 S13-0630-Rev. B, 25-Mar-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2336DS Vishay Siliconix TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 2.0 6 1.6 Package Limited 4 Power (W) ID - Drain Current (A) 5 3 1.2 0.8 2 0.4 1 0.0 0 0 25 50 75 100 125 150 25 TC - Case Temperature (C) Current Derating* 50 75 100 125 150 TC - Case Temperature (C) Power Derating * The power dissipation PD is based on TJ(max.) = 150 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 71978 S13-0630-Rev. B, 25-Mar-13 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2336DS Vishay Siliconix TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.05 PDM 0.1 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 130 C/W 3. TJM - T A = PDMZthJA(t) Single Pulse 0.01 10 -4 4. Surface Mounted 10 -3 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71978. www.vishay.com 6 For technical questions, contact: pmostechsupport@vishay.com Document Number: 71978 S13-0630-Rev. B, 25-Mar-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOT-23 (TO-236): 3-LEAD b 3 E1 1 E 2 e S e1 D 0.10 mm C 0.004" A2 A C q Gauge Plane Seating Plane Seating Plane C A1 Dim 0.25 mm L L1 MILLIMETERS Min INCHES Max Min Max 0.044 A 0.89 1.12 0.035 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 e 0.95 BSC e1 L 1.90 BSC 0.40 L1 q 0.0748 Ref 0.60 0.016 0.64 Ref S 0.024 0.025 Ref 0.50 Ref 3 0.055 0.0374 Ref 0.020 Ref 8 3 8 ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 Document Number: 71196 09-Jul-01 www.vishay.com 1 AN807 Vishay Siliconix Mounting LITTLE FOOTR SOT-23 Power MOSFETs Wharton McDaniel Surface-mounted LITTLE FOOT power MOSFETs use integrated circuit and small-signal packages which have been been modified to provide the heat transfer capabilities required by power devices. Leadframe materials and design, molding compounds, and die attach materials have been changed, while the footprint of the packages remains the same. See Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs, (http://www.vishay.com/doc?72286), for the basis of the pad design for a LITTLE FOOT SOT-23 power MOSFET footprint . In converting this footprint to the pad set for a power device, designers must make two connections: an electrical connection and a thermal connection, to draw heat away from the package. ambient air. This pattern uses all the available area underneath the body for this purpose. 0.114 2.9 0.081 2.05 0.150 3.8 0.059 1.5 0.0394 1.0 0.037 0.95 FIGURE 1. Footprint With Copper Spreading The electrical connections for the SOT-23 are very simple. Pin 1 is the gate, pin 2 is the source, and pin 3 is the drain. As in the other LITTLE FOOT packages, the drain pin serves the additional function of providing the thermal connection from the package to the PC board. The total cross section of a copper trace connected to the drain may be adequate to carry the current required for the application, but it may be inadequate thermally. Also, heat spreads in a circular fashion from the heat source. In this case the drain pin is the heat source when looking at heat spread on the PC board. Figure 1 shows the footprint with copper spreading for the SOT-23 package. This pattern shows the starting point for utilizing the board area available for the heat spreading copper. To create this pattern, a plane of copper overlies the drain pin and provides planar copper to draw heat from the drain lead and start the process of spreading the heat so it can be dissipated into the Document Number: 70739 26-Nov-03 Since surface-mounted packages are small, and reflow soldering is the most common way in which these are affixed to the PC board, "thermal" connections from the planar copper to the pads have not been used. Even if additional planar copper area is used, there should be no problems in the soldering process. The actual solder connections are defined by the solder mask openings. By combining the basic footprint with the copper plane on the drain pins, the solder mask generation occurs automatically. A final item to keep in mind is the width of the power traces. The absolute minimum power trace width must be determined by the amount of current it has to carry. For thermal reasons, this minimum width should be at least 0.020 inches. The use of wide traces connected to the drain plane provides a low-impedance path for heat to move away from the device. www.vishay.com 1 Application Note 826 Vishay Siliconix 0.049 (1.245) 0.029 0.022 (0.559) (0.724) 0.037 (0.950) (2.692) 0.106 RECOMMENDED MINIMUM PADS FOR SOT-23 0.053 (1.341) 0.097 (2.459) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72609 Revision: 21-Jan-08 www.vishay.com 25 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. (c) 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Vishay: SI2336DS-T1-GE3