© 2003 IXYS All rights reserved
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
VGE(th) IC= 250 µA, VCE = VGE 3.0 5.0 V
ICES VCE = VCES TJ = 25°C 650 µA
VGE = 0 V TJ = 125°C 5 mA
IGES VCE = 0 V, VGE = ±20 V ±100 nA
VCE(sat) IC= 50 A, VGE = 15 V TJ = 25°C 2.1 2.5 V
Note 1 TJ = 125°C 1.8 V
HiPerFASTTM
IGBT with Diode
Symbol Test Conditions Maximum Ratings
VCES TJ= 25°C to 150°C 600 V
VCGR TJ= 25°C to 150°C; RGE = 1 MΩ600 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC= 25°C (limited by leads) 75 A
IC110 TC= 110°C60A
ICM TC= 25°C, 1 ms 300 A
SSOA VGE = 15 V, TVJ = 125°C, RG = 10 ΩICM = 100 A
(RBSOA) Clamped inductive load @ VCE ≤ 600 V
PCTC= 25°C 480 W
TJ -55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
MdMounting torque, TO-264 1.13/10 Nm/lb.in.
Weight TO-264 10 g
PLUS247 6 g
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
G = Gate C = Collector
E = Emitter Tab = Collector
Features
•Very high frequency IGBT and
anti-parallel FRED in one package
•Square RBSOA
•High current handling capability
•MOS Gate turn-on for drive simplicity
•Fast Recovery Epitaxial Diode (FRED)
with soft recovery and low IRM
Applications
•Switch-mode and resonant-mode
power supplies
•Uninterruptible power supplies (UPS)
•DC choppers
•AC motor speed control
•DC servo and robot drives
Advantages
•Space savings (two devices in one
package)
•Easy to mount with 1 screw
GCE
TO-264 AA
(IXGK)
DS99044A(09/03)
PLUS247
(IXGX)
VCES = 600 V
IC25 = 75 A
VCE(sat) = 2.5 V
tfi(typ) = 35 ns
(TAB)
(TAB)
IXGK 60N60C2D1
IXGX 60N60C2D1
C2-Class High Speed IGBTs
Advance Technical Data
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
gfs IC= 50 A; VCE = 10 V, 40 58 S
Note 1
Cies 3900 pF
Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 280 pF
Cres 97 pF
Qg146 nC
Qge IC = 50 A, VGE = 15 V, VCE = 0.5 VCES 28 nC
Qgc 50 nC
td(on) 18 ns
tri 25 ns
td(off) 95 150 ns
tfi 35 ns
Eoff 0.48 0.8 mJ
td(on) 18 ns
tri 25 ns
Eon 0.9 mJ
td(off) 130 ns
tfi 80 ns
Eoff 1.2 mJ
RthJC 0.26 K/W
RthCK 0.15 K/W
Inductive load, TJ = 25°°
°°
°C
IC = 50 A, VGE = 15 V
VCE = 400 V, RG = Roff = 2.0 Ω
Inductive load, TJ = 125°°
°°
°C
IC = 50 A, VGE = 15 V
VCE = 400 V, RG = Roff = 2.0 Ω
PLUS247 Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A12.29 2.54 .090 .100
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b11.91 2.13 .075 .084
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
IXGK60N60C2D1
IXGX 60N60C2D1
TO-264 AA Outline
Millimeter Inches
Min. Max. Min. Max.
A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072
Dim.
Reverse Diode (FRED) Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
VFIF = 60 A, VGE = 0 V, 2.1 V
Note 1 TJ = 150°C 1.4
IRM IF = 60 A, VGE = 0 V, -diF/dt = 100 A/µ TJ = 100°C 8.3 A
VR = 100 V
trr IF = 1 A; -di/dt = 200 A/ms; VR = 30 V 35 ns
RthJC 0.85 K/W
Note 1: Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
© 2003 IXYS All rights reserved
IXGK60N60C2D1
IXGX 60N60C2D1
Fig. 2. Extended Output Characteristics
@ 25 deg. C
0
25
50
75
10 0
12 5
15 0
17 5
200
11.5 22.533.544.5
V
CE
- Volts
I
C
- Amperes
V
G E
= 1 5V
1 3V
1 1V 9V
5V
7V
Fig. 3. Output Characteristics
@ 125 Deg. C
0
10
20
30
40
50
60
70
80
90
10 0
0.511.522.533.5
V
CE
- Volts
I
C
- Amperes
V
G E
= 1 5V
1 3V
1 1V
5V
7V
9V
Fig. 1. Output Characteristics
@ 25 Deg. C
0
10
20
30
40
50
60
70
80
90
10 0
0.511.522.533.5
V
CE
- Volts
I
C
- Amperes
V
G E
= 1 5V
1 3V
1 1V
7V
5V
9V
Fig. 6. Input Admittance
0
25
50
75
10 0
12 5
15 0
17 5
200
3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5
V
GE
- Volts
I
C
- Amperes
T
J
= 1 25ºC
25ºC
-40ºC
Fig. 4. Temperature Dependence of V
CE(sat)
0.5
0.6
0.7
0.8
0.9
1
1. 1
1. 2
25 50 75 100 125 150
T
J
- Degrees Centigrade
V
C E (sat)
- Normalized
I
C
= 1 00A
I
C
= 50A
I
C
= 25A
V
G E
= 1 5V
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter voltage
1
1. 5
2
2.5
3
3.5
4
4.5
5
5 6 7 8 9101112131415
V
GE
- Volts
V
CE
- Volts
T
J
= 25ºC
I
C
= 1 00A
50A
25A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXGK60N60C2D1
IXGX 60N60C2D1
Fig. 12. Capacitance
10
10 0
10 0 0
10 0 0 0
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - pF
Cies
Coes
Cres
f = 1 M Hz
Fig. 11. Gate Charge
0
3
6
9
12
15
0 20406080100120140160
Q
G
- nanoCoulombs
V
G E
- Volts
V
C E
= 300V
I
C
= 50A
I
G
= 1 0mA
Fig. 7. Transconductance
0
10
20
30
40
50
60
70
80
90
10 0
0 255075100125150175200
I
C
- Amperes
g
f s
- Siemens
T
J
= -40
º
C
25
º
C
1 25
º
C
Fig. 8. Dependence of E
off
on R
G
0
1
2
3
4
5
6
246810121416
R
G
- Ohms
E
off
- milliJoules
I
C
= 75A
I
C
= 25A
T
J
= 1 25
º
C
V
GE
= 1 5V
V
CE
= 400V
I
C
= 50A
I
C
= 1 00A
Fig. 9. Dependence of E
off
on I
C
0
1
2
3
4
5
20 30 40 50 60 70 80 90 100
I
C
- Amperes
E
off
- MilliJoules
R
G
= 2 Ohms
R
G
= 1 0 Ohms - - - - -
T
J
= 1 25
º
C
V
G E
= 1 5V
V
C E
= 400V
T
J
= 25
º
C
Fig. 10. Dependence of E
off
on Temperature
0
1
2
3
4
5
25 50 75 100 125
T
J
- Degrees Centigrade
E
off
- milliJoules
I
C
= 1 00A
I
C
= 50A
I
C
= 25A
V
G E
= 1 5V
V
C E
= 400V
R
G
= 2 Ohms
R
G
= 1 0 Ohms - - - - -
I
C
= 75A
© 2003 IXYS All rights reserved
200 600 10000 400 800
80
90
100
110
120
130
140
0.00001 0.0001 0.001 0.01 0.1 1
0.0001
0.001
0.01
0.1
1
0 40 80 120 160
0.0
0.5
1.0
1.5
2.0
Kf
TVJ
°C
-diF/dt
t
s
K/W
0 200 400 600 800 1000
0
5
10
15
20
0.0
0.4
0.8
1.2
1.6
VFR
diF/dt
V
200 600 10000 400 800
0
20
40
60
80
100 1000
0
1000
2000
3000
4000
012
0
20
40
60
80
100
120
140
160
IRM
Qr
IF
A
VF-diF/dt -diF/dt
A/µs
A
V
nC
A/µsA/µs
trr
ns
tfr
A/µs
µs
DSEP 2x61-06A
ZthJC
IF=120A
IF= 60A
IF= 30A
TVJ= 100°C
VR = 300V
TVJ= 100°C
IF = 60A
Fig. 14 Peak reverse current IRM
versus -diF/dt
Fig. 13 Reverse recovery charge Qr
versus -diF/dt
Fig. 12 Forward current IF versus VF
TVJ= 100°C
VR = 300V
TVJ= 100°C
VR = 300V
IF=120A
IF= 60A
IF= 30A
Qr
IRM
Fig. 15 Dynamic parameters Qr, IRM
versus TVJ
Fig. 16 Recovery time trr versus -diF/dt Fig. 17 Peak forward voltage VFR and
tfr
versus diF/dt
IF=120A
IF= 60A
IF= 30A
tfr
VFR
Fig. 18 Transient thermal resistance junction to case
Constants for ZthJC calculation:
iR
thi (K/W) ti (s)
1 0.3073 0.0055
2 0.3533 0.0092
3 0.0887 0.0007
4 0.1008 0.0399
TVJ= 25°C
TVJ=150°C
TVJ=100°C
