PJ2N5551 NPN Epitaxial Silicon Transistors AMPLIFIER TRANSISTO R * * TO-92 Collector-Base Voltage: VCEO=160V Collector Dissipation Pc=0.625W(Tc=25) ABSOLUTE MAXIMUM RATINGS (Ta = 25) Characteristic Symbol Rating Unit Collector-base Voltage VCBO 180 V Collector-Emitter Voltage VCEO 160 V Emitter-base Voltage VEBO 5 V Collector Current (DC) IC 0.6 A * Collector Dissipation PC 0.625 W Junction Temperature TJ 150 Storage Temperature Tstg -55~150 P in : 1. Emitter 2.Base 3.Collector ORDERING INFORMATION Device Operating Temperature Package -20+85 TO-92 PJ2N5551CT ELECTRICAL CHARACTERISTICS (Ta=25) Characteristic Symbol Test Condition Min Typ Max Unit Collector-Base Breakdown Voltage BVCBO Ic=100A,IE =0 180 V Collector- Emitter Breakdown BVCEO Ic=1mA,IB=0 160 V Voltage BVEBO IE =10A,IC=0 6 V Emitter-Base Breakdown Voltage ICBO VCB=120V,IE =0 50 nA Collector Cutoff Current IEBO VEB=4V,Ic=0 50 nA Emitter Cutoff Current HEF1 VCE =5V,IC=1 mA 80 DC Current Gain HEF2 VCE =5V,IC=10mA 80 HEF3 VCE =5V,IC=50mA 30 Ic=10 mA,IB=1 mA 0.15 V Ic=50 mA,IB=5 mA 0.2 V Ic=10 mA,IB=1 mA 1 V Ic=50 mA,IB=5 mA 1 V VCB=20V,IE =0, f=1MHz 6 PF 300 MHz 8 dB VCE(SAT) Collector-Emitter Saturation Voltage VBE(SAT) Base-Emitter Saturation Voltage Cob Output Capacitance fT VCE =10V,Ic=10Ma,f=100 MHz Current Gain-Bandwidth product NF VCE =5V,IC=250A Noise Figure * 100 Rs=1K,f=10Hz to 15.7KHz Pulse Test: Pulse Width300s, Duty Cycle2%. 1-3 2002/01.rev.A PJ2N5551 NPN Epitaxial Silicon Transistors DC CURRENT GAIN BASE-EMITTER ON VOLTAGE CURRENT GAIN-BANDWIDTH PRODUCT BASE-EMITTER SATURATION VOLTAGE COLLECTOR-EMITTER SATURANION VOLTAGE OUTPUT CAPACITANCE 2-3 2002/01.rev.A PJ2N5551 NPN Epitaxial Silicon Transistors 3-3 2002/01.rev.A