© 2008 IXYS CORPORATION, All rights reserved DS99197F(05/08)
VDSS = 300V
ID25 = 52A
RDS(on) ≤≤
≤≤
≤ 66mΩΩ
ΩΩ
Ω
trr ≤≤
≤≤
≤ 200ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Features
zInternational standard packages
zFast recovery diode
zAvalanche rated
zLow package inductance
- easy to drive and to protect
Advantages
zEasy to mount
zSpace savings
zHigh power density
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 300 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ300 V
VGSS Continuous ± 20 V
VGSM Transient ± 30 V
ID25 TC= 25°C 52 A
IDM TC= 25°C, pulse width limited by TJM 150 A
IATC= 25°C 52 A
EAS TC= 25°C 1 J
dV/dt IS≤ IDM, VDD ≤ VDSS,T
J ≤ 150°C 10 V/ns
PDTC= 25°C 400 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TLMaximum lead temperature for soldering 300 °C
TSOLD Plastic body for 10s 260 °C
MdMounting torque (TO-247) 1.13/10 Nm/lb.in.
FCMounting force (PLUS220) 11..65/2.5..14.6 N/lb.
Weight PLUS220 & PLUS220SMD 4 g
TO-247 6 g
G = Gate D = Drain
S = Source TAB = Drain
IXFV52N30P
IXFV52N30PS
IXFH52N30P
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 250μA 300 V
VGS(th) VDS = VGS, ID = 4mA 2.5 5.0 V
IGSS VGS = ± 20V, VDS = 0V ± 100 nA
IDSS VDS = VDSS 25 μA
VGS = 0V TJ = 125°C 1 mA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 66 mΩ
PolarHTTM Power
MOSFET HiPerFETTM
G
SD (TAB)
PLUS220SMD (IXFV_S)
TO-247 (IXFH)
PLUS220 (IXFV)
GDS
D (TAB)
D (TAB)
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IXYS reserves the right to change limits, test conditions, and dimensions.
IXFH52N30P IXFV52N30P
IXFV52N30PS
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
gfs VDS = 10V, ID = 0.5 • ID25, Note 1 20 30 S
Ciss 3490 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 550 pF
Crss 130 pF
td(on) 24 ns
tr 22 ns
td(off) 60 ns
tf 20 ns
Qg(on) 110 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 25 nC
Qgd 53 nC
RthJC 0.31 °C/W
RthCS (TO-247, PLUS220) 0.25 °C/W
Source-Drain Diode Characteristic Values
TJ = 25°C unless otherwise specified) Min. Typ. Max.
ISVGS = 0V 52 A
ISM Repetitive, pulse width limited by TJM 150 A
VSD IF = IS, VGS = 0V, Note 1 1.5 V
trr 160 200 ns
QRM 800 nC
IRM 7 A
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IF = 25A, -di/dt = 100A/μs
VR = 100V, VGS = 0V
TO-247 (IXFH) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
e
∅ P
PLUS220 (IXFV) Outline
PLUS220SMD (IXFV_S) Outline
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 52A
RG = 4Ω (External)
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© 2008 IXYS CORPORATION, All rights reserved
IXFH52N30P IXFV52N30P
IXFV52N30PS
Fig. 2. Exte nd e d Output Cha racte ri stics
@ 25º C
0
25
50
75
100
125
150
0 4 8 1216202428
V
D S
- V o l ts
I
D
- Amp eres
V
GS
= 10V
9V
5V
6V
7V
8V
Fig. 3. Output Characte ri stics
@ 125º C
0
5
10
15
20
25
30
35
40
45
50
55
012345678910
V
D S
- V ol ts
I
D
- Amperes
V
GS
= 10V
8V
6V
7V
5V
Fig. 1. Output Characte ri stics
@ 25ºC
0
5
10
15
20
25
30
35
40
45
50
55
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
V
D S
- V o l ts
I
D
- Amperes
V
GS
= 10V
8V
7V
5V
6V
Fig. 4. R
DS(on)
Normalized to I
D
= 26A
V
alue
vs. Juncti on Tem pe rature
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Cent i grade
R
D S ( on)
- Normalized
I
D
= 52
A
I
D
= 26A
V
GS
= 10V
Fig. 6. Drain Curre nt vs. Ca se
Temperature
0
10
20
30
40
50
60
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Ampe res
Fig . 5. R
DS(on)
Normalized to I
D
= 26A
V
alue
vs. Drain Current
0.6
1.0
1.4
1.8
2.2
2.6
3.0
3.4
3.8
0 25 50 75 100 125 150
I
D
- A m peres
R
D S (on)
- No rma lized
T
J
= 125ºC
T
J
= 25ºC
V
GS
= 10V
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IXYS reserves the right to change limits, test conditions, and dimensions.
IXFH52N30P IXFV52N30P
IXFV52N30PS
Fig. 11. Capaci tan ce
100
1000
10000
0 5 10 15 20 25 30 35 40
V
D S
- V ol ts
Capacitance - pF
C
iss
C
oss
C
rss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 10203040506070809010
011
012
0
Q
G
- nanoCoulom bs
V
G S
- Vo lts
V
DS
= 150V
I
D
= 26A
I
G
= 10mA
Fi g. 7. I nput Adm i tta nce
0
10
20
30
40
50
60
70
80
90
100
4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0
V
G S
- V o l ts
I
D
- Amperes
T
J
= 125ºC
25ºC
-40ºC
Fig. 8. Tra nsconductance
0
5
10
15
20
25
30
35
40
45
50
55
60
0 102030405060708090100
I
D
- A mperes
g
f s
- Siemens
T
J
= - 40ºC
125ºC
25ºC
Fi g. 9. Source Curre nt vs.
Source -To-Dra i n V ol ta ge
0
20
40
60
80
100
120
140
160
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
V
S D
- V ol ts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 12. Forward-Bi as S afe
Operating Area
1
10
100
1000
10 100 1000
V
D S
- V olt s
I
D
- Amp eres
25µs
1ms
DC
R
DS
(on)
Limi
t
T
J
= 25ºC
T
J
= 150ºC
Single P ulse
100ms
10ms
IXYS REF: T_52N30P(6S)3-14-06-C
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© 2008 IXYS CORPORATION, All rights reserved
IXFH52N30P IXFV52N30P
IXFV52N30PS
IXYS REF: T_52N30P(6S)3-14-06-C
Fi g. 13. M a xi m um Transien t Therm a l I m pedance
0.01
0.10
1.00
1 10 100 1000
Puls e W idth - millis ec onds
Z
(th) J C
-
(ºC/W)
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