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FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev.A 1 www.fairchildsemi.com
FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET
FQP8N80C/FQPF8N80C/FQPF8N80CYDTU
800V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies.
Features
8A, 800V, RDS(on) = 1.55 @VGS = 10 V
Low gate charge ( typical 35 nC)
Low Crss ( typical 13 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Absolute Maximum Ratings TC = 25°C unless otherwise noted
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol Parameter FQP8N80C FQPF8N80C Units
VDSS Drain-Source Voltage 800 V
IDDrain Current - Continuous (TC = 25°C) 88 *A
- Continuous (TC = 100°C) 5.1 5.1 * A
IDM Drain Current - Pulsed (Note 1) 32 32 * A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 850 mJ
IAR Avalanche Current (Note 1) 8A
EAR Repetitive Avalanche Energy (Note 1) 17.8 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PDPower Dissipation (TC = 25°C) 178 59 W
- Derate above 25°C 1.43 0.48 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds 300 °C
Symbol Parameter FQP8N80C FQPF8N80C Units
RθJC Thermal Resistance, Junction-to-Case 0.7 2.1 °C/W
RθJS Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W
RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W
TO-220
FQP Series
GSD TO-220F
FQPF Series
GS
D
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S
D
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QFETTM
January 2009
RoHS Compliant
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FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET
FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev.A 2
Electrical Characteristics TC = 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 25mH, IAS = 8A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 8A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA800 -- -- V
BVDSS
/ TJ
Breakdown Voltage Temperature
Coefficient ID = 250 µA, Referenced to 25°C -- 0.5 -- V/°C
IDSS Zero Gate Voltage Drain Current VDS = 800 V, VGS = 0 V -- -- 10 µA
VDS = 640 V, TC = 125°C -- -- 100 µA
IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA3.0 -- 5.0 V
RDS(on) Static Drain-Source
On-Resistance VGS = 10 V, ID = 4 A -- 1.29 1.55
gFS Forward Transconductance VDS = 50 V, ID = 4 A (Note 4) -- 5.6 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 1580 2050 pF
Coss Output Capacitance -- 135 175 pF
Crss Reverse Transfer Capacitance -- 13 17 pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 400 V, ID = 8 A,
RG = 25
(Note 4, 5)
-- 40 90 ns
trTurn-On Rise Time -- 110 230 ns
td(off) Turn-Off Delay Time -- 65 140 ns
tfTurn-Off Fall Time -- 70 150 ns
QgTotal Gate Charge VDS = 640 V, ID = 8 A,
VGS = 10 V
(Note 4, 5)
-- 35 45 nC
Qgs Gate-Source Charge -- 10 -- nC
Qgd Gate-Drain Charge -- 14 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drain-Source Diode Forward Current -- -- 8 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 32 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 8 A -- -- 1.4 V
trr Reverse Recovery Time VGS = 0 V, IS = 8 A,
dIF / dt = 100 A/µs (Note 4)
-- 690 -- ns
Qrr Reverse Recovery Charge -- 8.2 -- µC
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FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET
048121620
1.0
1.5
2.0
2.5
3.0
V
GS = 20V
V
GS = 10V
Note : T
J
= 25
RDS(ON) [Ω],
Drain-Source On-Resistance
ID
, Drain Current [A]
0.2 0.4 0.6 0.8 1.0 1.2 1.4
10-1
100
101
150
Notes :
1. VGS = 0V
2. 250μs Pulse Test
25
IDR , Reverse Drain Current [A]
VSD, Source-Drain voltage [V]
10-1 100101
10-1
100
101
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
Notes :
1. 250μs Pulse Test
2. TC
= 25
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
246810
10-1
100
101
150oC
25oC-55oC
Notes :
1. VDS = 50V
2. 250μs Pulse Test
ID, Drain Current [A]
VGS, Gate-Source Voltage [V]
Typical Characteristics
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics
10-1 100101
0
500
1000
1500
2000
2500 C
iss = Cgs + Cgd (Cds = shorted)
C
oss = Cds + Cgd
C
rss = Cgd
Notes :
1. VGS = 0 V
2. f = 1 MHz
Crss
Coss
Ciss
Capacitance [pF]
VDS, Drain-Source Voltage [V]
010203040
0
2
4
6
8
10
12
VDS = 400V
VDS = 160V
VDS = 640V
Note : ID
= 8A
VGS , Gate-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
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FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET
FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev.A 4
Typical Characteristics (Continued)
Figure 9-1. Maximum Safe Operating Area
for FQP8N80C
Figure 10. Maximum Drain Current
vs Case Temperature
Figure 9-2. Maximum Safe Operating Area
for FQPF8N80C
25 50 75 100 125 150
0
2
4
6
8
10
ID, Drain Current [A]
TC
, Case Temperature [
]
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
Notes :
1. VGS = 0 V
2. ID
= 250 μA
BV DSS , (Normalized)
Drain-Source Breakdown Voltage
T
J, Junction Temperature [o
C]
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Notes :
1. VGS = 10 V
2. ID
= 4.0 A
RDS(ON) , (Normalized)
Drain-Source On-Resistance
TJ, Junction Temperature [oC]
100101102103
10-2
10-1
100
101
102
10 µs
DC
10 ms
1 ms
100 µs
Operation in This Area
is Limited by R DS(on)
Notes :
1. TC
= 25 oC
2. TJ = 150 oC
3. Single Pulse
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
100101102103
10-2
10-1
100
101
102
10 µs
DC
10 ms
1 ms
100 µs
Operation in This Area
is Limited by R DS(on)
Notes :
1. TC
= 25 oC
2. TJ = 150 oC
3. Single Pulse
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
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FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET
FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev.A 5
Typical Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve for FQP8N80C
Figure 11-2. Transient Thermal Response Curve for FQPF8N80C
10-5 10-4 10-3 10-2 10-1 100101
10-2
10-1
100
Notes :
1 . Z θJC(t) = 0.7 /W M a x .
2 . D uty Facto r, D = t1/t2
3 . T JM - T C = PDM * ZθJC (t)
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
ZθJC
(t), Thermal Response
t1, Square Wave Pulse Duration [sec]
10-5 10-4 10-3 10-2 10-1 100101
10-2
10-1
100
Notes :
1 . Z θJC(t) = 2.1 /W M ax.
2 . D u ty F actor, D = t1/t2
3 . T JM - TC = PDM * ZθJC(t)
sin g le pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
ZθJC
(t), Therm al R e sponse
t1, Square Wave Pulse Duration [sec]
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FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET
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5
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
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FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET
FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev. A www.fairchildsemi.com
6
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
VDS
+
_
Driver
RG
Sam e Type
as D U T
VGS
dv/dt controlled by R
G
•I
SD
controlled by pulse period
VDD
L
ISD
10V
VGS
( D riv e r )
ISD
( D U T )
VDS
( DUT )
VDD
Body D iode
Forw ard Voltage D rop
VSD
I
FM
, Body D iode Forw ard C urrent
Body D iode R everse C urrent
IRM
Body D iode R ecovery dv/dt
di/dt
D = G ate P ulse W idth
Gate Pulse Period
--------------------------
DUT
VDS
+
_
Driver
RG
Sam e Type
as D U T
VGS
dv/dt controlled by R
G
•I
SD
controlled by pulse period
VDD
LL
ISD
10V
VGS
( D riv e r )
ISD
( D U T )
VDS
( DUT )
VDD
Body D iode
Forw ard Voltage D rop
VSD
I
FM
, Body D iode Forw ard C urrent
Body D iode R everse C urrent
IRM
Body D iode R ecovery dv/dt
di/dt
D = G ate P ulse W idth
Gate Pulse Period
--------------------------
D = G ate P ulse W idth
Gate Pulse Period
--------------------------
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FDB037N06 N-Channel PowerTrench® MOSFET
FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev. A www.fairchildsemi.com
7
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
VDS
+
_
Driver
RG
Sam e Type
as D U T
VGS
dv/dt controlled by R
G
•I
SD
controlled by pulse period
VDD
L
ISD
10V
VGS
( D riv e r )
ISD
( D U T )
VDS
( DUT )
VDD
Body D iode
Forw ard Voltage D rop
VSD
I
FM
, Body D iode Forw ard C urrent
Body D iode R everse C urrent
IRM
Body D iode R ecovery dv/dt
di/dt
D = G ate P ulse W idth
Gate Pulse Period
--------------------------
DUT
VDS
+
_
Driver
RG
Sam e Type
as D U T
VGS
dv/dt controlled by R
G
•I
SD
controlled by pulse period
VDD
LL
ISD
10V
VGS
( D riv e r )
ISD
( D U T )
VDS
( DUT )
VDD
Body D iode
Forw ard Voltage D rop
VSD
I
FM
, Body D iode Forw ard C urrent
Body D iode R everse C urrent
IRM
Body D iode R ecovery dv/dt
di/dt
D = G ate P ulse W idth
Gate Pulse Period
--------------------------
D = G ate P ulse W idth
Gate Pulse Period
--------------------------
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FQP8N80C/FQPF8N80CFQPF8N80CYDTU 800V N-Channel MOSFET
FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev.A 8
Package Dimensions
4.50 ±0.20
9.90 ±0.20
1.52 ±0.10
0.80 ±0.10 2.40 ±0.20
10.00 ±0.20
1.27 ±0.10
ø3.60 ±0.10
(8.70)
2.80 ±0.1015.90 ±0.20
10.08 ±0.30 18.95MAX.
(1.70)
(3.70)(3.00)
(1.46)
(1.00)
(45°)
9.20 ±0.2013.08 ±0.20
1.30 ±0.10
1.30 +0.10
–0.05
0.50 +0.10
–0.05
2.54TYP
[2.54 ±0.20]2.54TYP
[2.54 ±0.20]
TO-220
Dimensions in Millimeters
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FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET
FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev.A 9
Package Dimensions (Continued)
(7.00) (0.70)
MAX1.47
(30°)
#1
3.30 ±0.10
15.80 ±0.20
15.87 ±0.20
6.68 ±0.20
9.75 ±0.30
4.70 ±0.20
10.16 ±0.20
(1.00x45°)
2.54 ±0.20
0.80 ±0.10
9.40 ±0.20
2.76 ±0.20
0.35 ±0.10
ø3.18 ±0.10
2.54TYP
[2.54 ±0.20]2.54TYP
[2.54 ±0.20]
0.50 +0.10
0.05
TO-220F
Dimensions in Millimeters
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FQF8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET
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10
FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev.A
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FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET
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Rev. I37
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intended to be an exhaustive list of all such trademarks.
* EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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THEREIN, WHICH COVERS THESE PRODUCTS.
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As used herein:
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and (c) whose failure t o perform when properly used in accord ance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to p erform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT
CTL™
Current Transfer Logic™
EcoSPARK®
EfficentMax™
EZSWITCH™ *
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FlashWriter® *
FPS™
F-PFS™
FRFET®
Global Power ResourceSM
Green FPS™
Green FPS™ e-Series™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC®
OPTOPLANAR®
®
PDP SPM™
Power-SPM™
PowerTrench®
PowerXS™
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW /W /kW at a time™
SmartMax™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™ ®
The Power Franchise®
TinyBoost™
TinyBuck™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
μSerDes™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
tm
®
tm
tm
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Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications
may change in any manner with out notice.
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date. Fairchild Semiconduct or reserves the right to make changes at any time withou t
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make changes at any time without notice to impr ove the design.
Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild
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